Books

  1. M. Sugiyama, K. Fujii and S. Nakamura (eds.), “Solar to Chemical Energy Conversion - Theory and Applications -,” Springer, ISSN 2195-1284 (2016).
  2. M. Sugiyama, “Photovoltaic power generation.” A chapter in “Energy Technology Roadmaps of Japan -Future Energy Systems Based on Feasible Technologies Beyond 2030 -,” by Y. Kato, M. Koyama, Y. Kukushima, T. Nakagaki (eds.), Springer, ISBN 978-4-431-55951-1.

International Journals

  1. K. Toprasertpong, T. Inoue, Y. Nakano, M. Sugiyama, “Investigation and modeling of photocurrent collection process in multiple quantum well solar cells,” Solar Energy Materials and Solar Cells, v 174, p 146-156, January (2018)
  2. K. Toprasertpong, S. M. Goodnick, Y. Nakano, M. Sugiyama, “Effective mobility for sequential carrier transport in multiple quantum well structures,” Phys. Rev. B. vol. 96, no. 7, p. 075441 (10 pp.), Aug. (2017)
  3. A. Paszuk, O. Supplie, B. Kim, S. Bruckner, M. Nandy, A. Heinisch, P. Kleinschmidt, Y. Nakano, M. Sugiyama, Thomas Hannappel, “GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation,” Solar Energy Materials and Solar Cells, published online (2017)
  4. B. Kim, K. Toprasertpong, A. Paszuk, O. Supplie, Y. Nakano, T. Hannappel, M. Sugiyama, “GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells,” Solar Energy Materials and Solar Cells, published online (2017)
  5. W. Yanwachirakul, N. Miyashita, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Okada and Y. Nakano, “Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap,” Jpn. J. Appl. Phys., vol. 56, no. 8S2, p. 08MA04, July (2017)
  6. A. Fukuyama, K. Matsuochi, T. Nakamura, H. Takeda, K. Toprasertpong, M. Sugiyama, Y. Nakano, H. Suzuki and T. Ikari, “Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p?i?n GaAs solar cells”, Jpn. J. Appl. Phys., vol. 56, no. 8S2, p. 08MC07, July (2017)
  7. Hao Xu, K. Toprasertpong, A. Delamarre, H. Sodabanlu, K. Watanabe, Y. Nakano and M. Sugiyama, “Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells,” Jpn. J. Appl. Phys., vol. 56, no. 8S2, p. 08MC06, July (2017)
  8. H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano, “Effects of various dopants on properties of GaAs tunneling junctions and p?i?n solar cells,” Jpn. J. Appl. Phys., vol. 56, no. 8S2, p. 08MC11, July (2017)
  9. C. Liu, A. Kumamoto, M. Suzuki, H. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si,” Semiconductor Science and Technology, v 32, n 7, p. 075003, June (2017)
  10. H. Wang, H. Sodabanlu, Y. Daigo, T. Seino, T. Nakagawa, M. Sugiyama, “Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate,” J. Crystal Growth, v 465, p 12-17, May (2017)
  11. H. Xia, R. Patterson, S. Smyth, Y. Feng, S. Chung, Y. Zhang, S. Shrestha, S. Huang, H. Uchiyama, S. Tsutsui, M. Sugiyama, A. Baron, G. Conibeer, “Inelastic X-ray scattering measurements of III-V multiple quantum wells”, Appl. Phys. Lett., v 110, n 4, January (2017)
  12. K. Koike, K. Yamamoto, S. Ohara, T. Kikitsu, K. Ozasa, S. Nakamura, M. Sugiyama, Y. Nakano, K. Fujii, “Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes,” International Journal of Hydrogen Energy, 42, 9493-9499, April (2017)
  13. T. Watanabe, M. Takeuchi, Y. Nakano, M. Sugiyama, “Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111)”, J. Crystal Growth, 464, 33-38, Apr. (2017)
  14. M. Suzuki, A. Nakamura, Y. Nakano, M. Sugiyama, “Mechanism of stress control for GaN growth on Si using AlN interlayers,” J. Crystal Growth, 464, 148-152, Apr. (2017)
  15. A. Nakamura, M. Suzuki, K. Fujii, Y. Nakano, M. Sugiyama, “Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode,” J. Crystal Growth, 464, 180-184, Apr. (2017)
  16. H. Cho, K. Toprasertpong, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano, "Stability and Controllability of InGaAs/GaAsP Wire-on-Well (WoW) Structure for Multi-junction Solar Cells," J. Crystal Growth, 464, 86-93, Apr. (2017)
  17. K. Koike, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, K. Fujii, “Photoelectrochemical property differences between NiO dots and layer on n-Type GaN for water splitting,” J. Electrochem. Soc., v 163, n 13, p H1091-H1095 (2016)
  18. K. Toprasertpong, T. Inoue, A. Delamarre, K. Watanabe, J.-F. Guillemoles, M. Sugiyama, Y. Nakano, "Electroluminescence-based quality characterization of quantum wells for solar cell applications," J. Crystal Growth, 464, 94-99, Apr. (2017)
  19. T. Nakamura, K. Matsuochi, H. Suzuki, T. Ikari, K. Toprasertpong, M. Sugiyama, Y. Nakano, A. Fukuyama, “Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using Photoreflectance and Photoluminescence Spectroscopy,” Energy Procedia, v 102, p 121-125 (2016)
  20. H. Wang, Y. Daigo, T. Seino, S. Ishibashi, M. Sugiyama, “Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer,” Jpn. J. Appl. Phys., 55, 105501, Oct. (2016)
  21. H. Wang, H. Sodabanly, Y. Daigo, T. Seino, T. Nakagawa and M. Sugiyama, “Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates,” Applied Physics Express 9, 055503, May (2016)
  22. R.E.E. Tamayo, T. Hoshii, R. Tamaki, K. Watanabe, M. Sugiyama, Y. Okada, K. Miyano, “Maskless fabrication of broadband antireflection nanostructures on glass surfaces” Journal of Optics, v 18, n 6, p 064008 (6 pp.), June 2016.
  23. M. Sugiyama, H. Sugiyama, T. Katoh, K. Toprasertpong, H. Sodabanlu, K. Watanabe, D. Alonso-Alvarez, N. J. Ekins-Daukes and Y. Nakano, “Quantum Wire-on-Well (WoW) Cell with Long Carrier Lifetime for Efficient Carrier Transport,” Progress in Photovoltaics: Research and Applications, 24, 1606-14, Dec. (2016).
  24. A. Delamarre, L. Lombez, K. Watanabe, M. Sugiyama, Y. Nakano, J.-F. Guillemoles, “Experimental Demonstration of Optically Determined Solar Cell Current Transport Efficiency Map,” IEEE Journal of Photovoltaics, published online, Jan. (2016)
  25. T. Momose, T. Kamiya, Y. Suzuki, S. Ravasio, C. Cavallotti, M. Sugiyama, Y. Shimogaki, “Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions,” ECS J. Solid State Sci. Technol. Vol. 5, pp. 164-P171 (2016)
  26. D. J. Farrell, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Okada, “A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons,” Nature Communications 6, 8685, Nov. 2015.
  27. T. Smyth, M. Dvorak, M. J. Y. Tayebjee, V. B. Yasarapudi, H. Xia, Y. Feng, Y. Wang, B. Puthen-Veettil, S. Huang, S. Shrestha, S. P. Bremner, T. W. Schmidt, M. Sugiyama, G. J. Conibeer, “Hot Carrier Cooling in In0.17Ga0.83As/GaAs0.80P0.20 Multiple Quantum Wells: The Effect of Barrier Thickness,” IEEE J. Photovoltaics, vol. 6, no. 1, pp. 166-171, Oct. 2015.
  28. A. Nakamura, Y. Ota, K. Koike, Y. Hidaka, K. Nishioka, M. Sugiyama, K. Fujii, “A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells,” Applied Physics Express, 8 (10), 107101, Oct. 2015.
  29. K. Toprasertpong, T. Tanibuchi, H. Sugiyama, T. Kada, S. Asahi, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano, “Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique,” IEEE J. Photovoltaics, Vol. 5, no. 8, pp. 1613 - 1620, Sep. (2015)
  30. P. Rale, A. Delamarre, G. El-Hajje, R. Tamaki, K. Watanabe, Y. Shoji, Y. Okada, M. Sugiyama, L. Lombez, J.-F. Guillemoles, “Quantitative optical measurement of chemical potentials in intermediate band solar cells,” Journal of Photonics for Energy 5 (1) 053092, May (2015).
  31. K. Toprasertpong, K. N. Kasamatsu, H. Fujii, T. Kada, S, Asahi, Y. Wang, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano, “Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique,” Applied Physics Letters, vol. 107, no. 4, p 043901 (5 pp.), July (2015)
  32. K. Watanabe, T. Inoue, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array,” Japanese Journal of Applied Physics, v 54, n 8S1, p 08KA13 (5 pp.), August (2015)
  33. S. Ravasio, T. Momose, K. Fujii, Y. Shimogaki, M. Sugiyama, C. Cavallotti, “Analysis of the Gas Phase Kinetics Active During GaN Deposition From NH3 and Ga(CH3)3,” J. Phys. Chem. A 119, n. 28, pp. 7858-7871, July (2015)
  34. H. Fujii, T. Katoh, K. Toprasertpong, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano, “Thickness-modulated InGaAs/GaAsP superlattice solar cells on vicinal substrates,” J. Appl. Phys. 117(15):154501-1-9, April (2015)
  35. B. Behaghel, R. Tamaki, N. Vandamme, K. Watanabe, C. Dupuis, N. Bardou, H. Sodabanlu, A. Cattoni, Y. Okada, M. Sugiyama, S. Collin, J.-F. Guillemoles, “Absorption enhancement through Fabry-Perot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell,” Applied Physics Letters 106(8):081107, February (2015)
  36. Yong Fang Li, M. Sugiyama, H. Toshiyoshi, H. Fujita, “Scalable Throughput and Stable Scanning Probe Nanolithography Based on Local Anodic Oxidation by Arrayed Wear-Insensitive Sidewall Microprobes,” Journal of Microelectromechanical Systems, 24(5) 1471 - 1478 April 2015.
  37. T. Momose, Aiko Kondo, T. Kamiya, H. Yamada, J. Ohara, Y. Kitamura, H. Uchida, Y. Shimogaki, M. Sugiyama, “Solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) in mixed supercritical CO2 and H2 systems for application in supercritical fluid deposition of Cu,” J. Supercritical Fluids, 105, 193-200, Oct. 2015.
  38. A. Higo, T. Kiba, Y. Tamura, C. Thomas, J. Takayama, Y. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, I. Yamashita, A. Murayama, S. Samukawa, “Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks,” Scientific Reports, 5, 9371, March 2015.
  39. W. Yanwachirakul, H. Sugiyama, K. Toprasertpong, K. Watanabe, M. Sugiyama, Y. Nakano, “Effect of Barrier Thickness on Carrier Transport Inside Multiple Quantum Well Solar Cells Under High-Concentration Illumination,” IEEE Journal of Photovoltaics, v 5, n 3, p 846-53, (2015).
  40. D.J. Farrell, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Okada, “Can a Hot-Carrier Solar Cell also be an Efficient Up-converter?”, IEEE Journal of Photovoltaics v. 5, n. 2, p. 571-576 (2015)
  41. K. Toprasertpong, H. Sugiyama, T. Thomas, M. Fhrer, D. Alonsolvarez, D. J.Farrell, K. Watanabe, Y. Okada, N. J. Ekins-Daukes, M. Sugiyama, Y. Nakano, “Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells,” Progress in Photovoltaics: Research and Applications, Volume 24, pp. 533?542, April (2015)
  42. T. Aihara, A. Fukuyama, H. Suzuki, H. Fujii, M. Sugiyama, Y. Nakano, T. Ikari, “Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells,” J. Appl. Phys., vol 117, no 8, p. 084307 (6 pp.), Feb. 2015
  43. H. Fujii, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1-xAs/GaAs1-yPy superlattice on vicinal substrates,” J. Crystal Growth, vol 414, pp. 3-9, March 2015.
  44. T. Inoue, K. Watanabe, K. Toprasertpong, H. Fujii, M. Sugiyama, Y. Nakano, “Enhanced light trapping in multiple quantum wells by thin-film structure and backside grooves with dielectric interface,” IEEE J. Photovoltaics, vol. 5, no. 2, p 697-703, March 2015.
  45. E. E. Tamayo Ruiz, K. Watanabe, R. Tamaki, T. Hoshii, M. Sugiyama, Y. Okada, K. Miyano, A. Cvetkovic, R. Mohedano, M. Hernandez, “Plasma etching antireflection nanostructures on optical elements in concentrator photovoltaic systems,” Journal of Photonics for Energy 5(1) 057006, Dec. 2014.
  46. K. Toprasertpong, N. Kasamatsu, H. Fujii, T. Kada, S. Asahi, Y. Wang, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano, “Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells,” IEEE J. Photovoltaics, vol 4, no 6, pp. 1518-25, Nov. 2014
  47. H. Fujii, K. Toprasertpong, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano, “InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium,” J. Appl. Phys. 116, 203101, Nov. (2014).
  48. T. Aihara, A. Fukuyama, Y. Yokoyama, M. Kojima, H. Suzuki, M. Sugiyama, Y. Nakano, T. Ikari, “Detection of miniband formation in strain-balanced InGaAs/GaAsP quantum well solar cells by using a piezoelectric photothermal spectroscopy,” Journal of Applied Physics, v 116, n 4, p 044509 (6 pp.), July 2014.
  49. L. Li, R. Takigawa, A. Higo, E. Higurashi, M. Sugiyama, B. Liu, Y. Nakano, “Electrical pumping Fabry?Perot lasing of a III-V layer on a highly doped silicon micro rib,” Laser Physics Letters vol. 11, no. 11, 115807, Nov. (2014).
  50. K. Watanabe, Y. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell,” Journal of Crystal Growth, v 401, p 712-716, September, 2014
  51. T. Momose, M. Sugiyama, Eiichi Kondoh, Y. Shimogaki, “Design of a Multi-Wafer Reactor for Supercritical Fluid Deposition of Cu in Mass Production: (2) Benchmarks for Single- and Multiple-Wafer Reactors,” Journal of chemical engineering of Japan, 47(9):743-749, September 2014.
  52. T. Momose, M. Sugiyama, E. Kondoh, Y. Shimogaki, “Design of a multi-wafer reactor for supercritical fluid deposition of Cu in mass production: (1) reaction mechanism and kinetics,” J. Chemical Engineering of Japan, vol. 47, no. 9, p 737-742, September, 2014
  53. D. Alonso-Alvarez, T. Thomas, M. Fuhrer, N. P. Hylton, N. J. Ekins-Daukes, D. Lackner, S. P. Philipps, A. W. Bett, H. Sodabanlu, H. Fujii, K. Watanabe, M. Sugiyama, L. Nasi, M. Campanini, ” InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells,” Appl. Phys. Lett., 105(8):083124, Aug (2014)..
  54. A. Nakamura, K. Fujii, M. Sugiyama, Y. Nakano, “A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor,” Physical Chemistry Chemical Physics, vol. 16, no. 29, pp. 15326-15330 (2014).
  55. Yongfang Li, M. Sugiyama, H. Toshiyoshi, H. Fujita, “A mass-production-ready anti-wear probe for scanning probe microscopy lithography,” Japanese Journal of Applied Physics vol. 53, no. 6S, 06JF04 (2014).
  56. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates,” Journal of Applied Physics, v 115, n 23, June 21, 233104 (2014)
  57. J. Kjellman, M. Sugiyama, Y. Nakano, “Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon,” Applied Physics Letters, v 104, n 24, June 16, 241103-1-4 (2014)
  58. K. Koike, A. Nakamura, M. Sugiyama, Y. Nakano, K. Fujii, “Surface stability of n-type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions,” Physica Status Solidi (C) Current Topics in Solid State Physics, v 11, n 3-4, p 821-823, April 2014.
  59. C. Liu, H. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Void formation during GaN MOVPE on Si (111) employing low temperature AlN interlayers,” Physica Status Solidi (C) Current Topics in Solid State Physics, v 11, n 2, p 293-296, February (2014).
  60. C. Liu, A. Kumamoto, H. Sodabanlu, M. Sugiyama, Y. Nakano, “In-situ growth condition analysis of AlN interlayers for wafer curvature control in GaN MOVPE on Si (111),” Physica Status Solidi (C) Current Topics in Solid State Physics, v 11, n 3-4, p 598-603, April (2014)
  61. K. Toprasertpong, H. Fujii, W. Yunpeng, K. Watanabe, M. Sugiyama, Y. Nakano, “Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells,” IEEE J. Photovoltaics, vol. 4, pp. 607-613 (2014).
  62. K. Watanabe, Boram Kim, T. Inoue, H. Sodabanlu, M. Sugiyama, Masanao Goto, Shinya Hayashi, K. Miyano, and Y. Nakano, “Thin Film InGaAs/GaAsP MQWs Solar Cell with Backside Nano-Imprinted Pattern for Light-Trapping,” IEEE J. Photovoltaics, v 4, n 4, p 1086-1090, July 2014.
  63. L. C. Hirst, H. Fujii, Y. Wang; M. Sugiyama, N. J. Ekins-Daukes, “Hot Carriers in Quantum Wells for Photovoltaic Efficiency Enhancement”, IEEE J. Photovoltaics, vol. 4, pp. 244-252 (2014).
  64. A. Fukuyama, T. Aihara, Y. Yokoyama, M. Kojima, H. Fujii, H. Suzuki, M. Sugiyama, Y. Nakano, T. and Ikari, “Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells,” Phys. Status Solidi A, 211, pp. 444?448. (2014)
  65. H. Fujii, K. Toprasertpong, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: Toward current-matched Ge-based tandem cells,” Progress in Photovoltaics: Research and Applications, v 22, n 7, p 784-795, July (2014)
  66. H. Fujii, K. Toprasertpong, K. Watanabe, M. Sugiyama, Y. Nakano, “Evaluation of Carrier Collection Efficiency in Multiple Quantum Well Solar Cells,” IEEE J. Photovoltaics, vol. 4, pp. 237-243 (2014).
  67. T. Umejima, T. Momose, M. Sugiyama, E. Kondoh, Y. Shimogaki, “One-step Fabrication of Copper Thin Films on Insulators Using Supercritical Fluid Deposition,” J. Electrochem. Soc., v 160, n 12, p D3290-D3294 (2013)
  68. M. Mathew, H. Sodabanalu, M. Sugiyama, Y. Nakano, ” Orange/yellow InGaN/AlN nanodisk light emitting diodes,” Physica Status Solidi (C), v 10, n 11, p 1525-1528, November 2013
  69. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Compensation doping in InGaAs / GaAsP multiple quantum well solar cells for efficient carrier transport and improved cell performance,” J. Appl. Phys., v 114, n 10, 103101, September 14, 2013
  70. C. Liu, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Thickness optimization of GaN layers by in-situ observation of GaN MOVPE on Si (111),” Physica Status Solidi (C), v 10, n 11, p 1541-1544, November 2013.
  71. N. P. Hylton, X. Li, V. Giannini, Kan-Hua Lee, N.J. Ekins-Daukes, J. Loo, D. Vercruysse, P. V. Dorpe, H. Sodabanlu, M. Sugiyama, S. Maier, “Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes,” Scientific Reports, vol. 3, 2874, Oct. (2013)
  72. K. Fujii, S. Nakamura, M. Sugiyama, K. Watanabe, B. Bagheri, Y. Nakano, “Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell,” Int. J. Hydrogen Energy, v 38, n 34, p 14424-14432, November 13, 2013
  73. A. Nakamura, M. Sugiyama, K. Fujii Y. Nakano, “Comparison of Semiconductor?Electrolyte and Semiconductor?Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode,” Jpn. J. Appl. Phys., v 52, n 8 08JN20 1-4, August (2013).
  74. M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano and S. Takagi, “InGaAsP grating couplers fabricated using complementary-metal-oxide- semiconductor-compatible iii-V-on-insulator on Si,” Applied Physics Express, v 6, n 4, p 042501 (3 pp.), April (2013)
  75. Y. Nishimori, S. Ueki, K. Miwa, T. Kubota, M. Sugiyama, S. Samukawa, G. Hashiguchi, “Effect of neutral beam etching on mechanical property of microcantilevers,” Journal of Vacuum Science & Technology B, v 31, n 2, p 022001 (7 pp.), March (2013)
  76. S. Choi, A. Higo, M. Zaitsu, Myung-Joon Kwack, M. Sugiyama, H. Toshiyoshi, Y. Nakano, “Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide,” IEICE Electronics Express, v 10, n 6, (2013)
  77. K. Miwa, Y. Nishimori, Yuki, S. Ueki, M. Sugiyama, T. Kubota, S. Samukawa, “Low-damage silicon etching using a neutral beam,” Journal of Vacuum Science & Technology B, 31 pp. 051207 1-6 (2013).
  78. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “High-Aspect Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum-Well Solar Cells,” IEEE Journal of Photovoltaics, v 3, n 2, p 859-67, April (2013).
  79. K. Anazawa, H. Sodabanlu, K. Fujii, Y. Nakano, M. Sugiyama: “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” Journal of Crystal Growth, vol. 370, No. 1, pp. 82-86, May (2013).
  80. S. Ma, Y. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano: “Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure,” Journal of Crystal Growth, v 370, p 157-62, 1 May (2013)
  81. Yu Wen, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum Well Solar Cell,” IEEE Journal of Photovoltaics, v 3, n 1, p 289-94, Jan. (2013).
  82. Yong Fang Li, M. Sugiyama, H. Fujita, “Wear-Insensitive Sidewall Microprobe With Long-Term Stable Performance for Scanning Probe Microscopy Lithography,” Journal of Microelectromechanical Systems vol. 22, no. 4, 901-908, Jan. (2013)
  83. M. Sugiyama, Y. Wang; H. Fujii, H. Sodabanlu, K. Watanabe, Y. Nakano: (Invited paper) “A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration,” Journal of Physics D: Applied Physics, v 46, n 2, p 024001 (11 pp.), Jan. (2013).
  84. S.S. Han, A. Higo, Y. Wang, M. Deura, M. Sugiyama, Y. Nakano, S. Panyakeow, S. Ratanathammaphan: “Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy,” Microelectronic Engineering, 112, pp. 143-148 (2013).
  85. K. Watanabe, Y. Yamada, M. Senou, M. Sugiyama and Y. Nakano: “Fabrication of Monolithic Integrated Series-Connected GaAs PV Cells for Concentrator Application,” Japanese Journal of Applied Physics, v 51, n 10 PART 2, October, Photovoltaic Science and Engineering 10ND18 (2012)
  86. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama and Y. Nakano: “Impact of Strain Accumulation on InGaAs / GaAsP Multiple Quantum Wells Solar Cells: Direct Correlation Between In Situ Strain Measurement and Cell Performances,” Japanese Journal of Applied Physics, v 51, n 10 PART 2, October, Photovoltaic Science and Engineering 10ND16 (2012).
  87. ShaoJun Ma, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano: “Optimization of gas-switching sequence for InGaAs/GaAsP superlattice structures using in situ wafer curvature monitoring, “Japanese Journal of Applied Physics, v 51, n 10 PART 2, October, Photovoltaic Science and Engineering 10ND09 (2012).
  88. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama and Y. Nakano: “Effects of Background Zn Doping on the Performance of MOVPE-Grown InGaAs / GaAsP Multiple Quantum Wells Solar Cells,” Japanese Journal of Applied Physics, v 51, n 10 PART 2, October, Photovoltaic Science and Engineering 10ND15 (2012).
  89. H. Fujii, K. Watanabe, M. Sugiyama and Y. Nakano: “Effect of quantum well on the efficiency of carrier collection in InGaAs/GaAsP multiple quantum well solar cells,” Japanese Journal of Applied Physics, v 51, n 10 PART 2, October, Photovoltaic Science and Engineering 10ND04 (2012).
  90. S.S. Han, S. Panyakeow, S. Ratanathammaphan, A. Higo, Y. Wang, M. Deura, M. Sugiyama, Y. Nakano,: “The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxy,” Canadian Journal of Chemical Engineering, v 90, n 4, p 915-918, August (2012).
  91. S. Ueki, Y. Nishimori, H. Imamoto, T. Kubota, K. Kakushima, T. Ikehara, M. Sugiyama, S. Samukawa, G. Hashiguchi, “Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel,” IEEE Transactions on Electron Devices vol. 59, no. 8, 2235-2242, Aug. 2012.
  92. M. Yokoyama, K. Sanghyeon, Z. Rui, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, “III-V/Ge high mobility channel integration of InGaAs n-Channel and Ge p-channel metal-ox de-semiconductor field-effect transistors with self-aligned Ni-Based metal source/drain using direct wafer bonding,” Applied Physics Express, v 5, n 7, p 076501 (3 pp.), July (2012)
  93. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama, and Y. Nakano: “Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring,” Appl. Phys. Express, vol. 5, pp. 062301 1-3 May (2012).
  94. T. Nakano, T. Shioda, N. Enomoto, E. Abe, M. Sugiyama, Y. Nakano, Y. Shimogaki: “Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM,” J. Crystal Growth, v 347, n 1, p 25-30, May (2012)
  95. Y. Wang, K. Watanabe, Y. Wen, M. Sugiyama, Y. Nakano: “Strain-balanced InGaAs/GaAsP superlattice solar cell with enhanced short-circuit current and a minimal drop in open-circuit voltage,” Appl. Phys. Express, v 5, n 5, pp. 052301 1-3, May (2012)
  96. M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi: “Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping,” Optics Express, v 20, n 8, p 8718-25, April (2012).
  97. M. Sugiyama, Y. Wang, K. Watanabe, T. Morioka, Y. Okada, Y. Nakano: “Photocurrent Generation by Two-Step Photon Absorption with Quantum-Well Superlattice Cell,” IEEE J. Photovoltaics, v 2, n 3, p 298-302, July 2012.
  98. Y. Wang, Y. Wen, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano: “A Superlattice Solar Cell With Enhanced Short-Circuit Current and Minimized Drop in Open-Circuit Voltage,” IEEE J. Photovoltaics, vol. 2, no. 3, pp. 387 ? 392, July (2012).
  99. M. Sugiyama, T. Fujiwara, Y. Nakano: “Monolithic integration of semipolar pyramidal LEDs with tailored wavelengths,” Physica Status Solidi C, v 9, n 3-4, p 476-9, March 2012.
  100. Y. Wen, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “Enhanced Carrier Escape in MSQW Solar Cell and Its Impact on Photovoltaics Performance,” IEEE J. Photovoltaics, v 2, n 2, p 221-6, April 2012.
  101. Y. Wang, S. Ma, K. Watanabe, M. Sugiyama, Y. Nakano: “Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application,” J. Crystal Growth, Volume 352, Issue 1, 194-198, August (2012).
  102. M. Sugiyama, Y. Kondo, M. Takenaka, S. Takagi, Y. Nakano: “Uniformity improvement of selectively-grown InGaAs micro-discs on Si,” J. Crystal Growth, Volume 352, Issue 1, 229-234, August (2012)
  103. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers,” J. Crystal Growth, Volume 352, Issue 1, 239-244, August (2012).
  104. S. Ma, Y. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano: “Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs,” J. Crystal Growth, Volume 352, Issue 1, 245-248, August (2012).
  105. T. Momose, T. Uejima, H. Yamada, Y. Shimogaki, M. Sugiyama, “Ultra-Conformal Metal Coating on High-Aspect-Ratio Three-Dimensional Structures Using Supercritical Fluid: Controlled Selectivity/Non-Selectivity”, Japanese Journal of Applied Physics, v 51, n 5, pt.1, p 056502 (5 pp.), May (2012)
  106. T. Mino, H. Hirayama, T. Takano, K. Tsubaki, M. Sugiyama, “Characteristics of epitaxial lateral overgrowth AlN templates on (111)Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns,” physica status solidi (c) vol. 9, no. 3-4, 802-805, Mar., 2012
  107. K. Fujii, S. Nakamura, S. Yokojima, T. Goto, T. Yao, M. Sugiyama, Y. Nakano: “Photoelectrochemical properties of InxGa1-xN/GaN multiquantum well structures in depletion layers,” J. Phys. Chem. C, vol. 115 p. 25165-25169, December (2011)
  108. S. Ma, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano: “Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature,” J. Appl. Phys. vol. 110, p 113501 (5 pp.), December (2011).
  109. M. Takanaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi: “Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal-organic Source,” Jpn. J. Appl. Phys, vol. 50, pp. 010105 1-5, Jan. (2012)
  110. Y. Wen, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “Effect of GaAs step layer on InGaAs/GaAsP quantum well solar cells,” Appl. Phys. Express, vol. 4, pp. 122301 1-3, Dec. (2011)
  111. H. Sodabanlu, J.S. Yang, T. Tanemura, M. Sugiyama, Y. Shimogaki, Y. Nakano: “Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett., vol. 99, no. 15, pp. 151102 1-3, Oct. (2011).
  112. M. Yokoyama, R. Iida, S. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: “Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers,” IEEE Electron Device Letters, vol. 32, No. 9, pp. 1218-1220, Sep (2011)
  113. T. Mino, H. Hirayama, T. Takano, K. Tsubaki, M. Sugiyama: “Realization of 256-278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates,” Appl. Phys. Express, vol. 4, No. 9, pp. 092104 1-3, Sep. (2011).
  114. Y. Shimada, M. Suzuki, M. Sugiyama, I. Kumagai, M. Umetsu: “Bioassisted capture and release of nanoparticles on nanolithographed ZnO films,” Nanotechnology, Vol. 22, No. 27, pp. 275302, Jul. (2011)
  115. M. Sugiyama, S. Yasukochi, T. Shioda, Y. Shimogaki, and Y. Nakano: “Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth,” Physica Status Solidi C, vol. 7, no. 7-8, pp. 2085-2087, July, (2011).
  116. M. Yokoyama, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: “Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding,” Appl. Phys. Express, vol. 4, No. 5, pp. 054202 1-3, May (2011).
  117. M. Deura, Y. Kondo, M. Takenaka, S. Takagi, Y. Shimogaki, Y. Nakano, M. Sugiyama: “High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy,” Japanese Journal of Applied Physics, v 50, n 4, pt.2, p 04DH07 (5 pp.), April (2011).
  118. Ling-Han, Li, A, Higo, M. Sugiyama and Y. Nakano: “Monolithically integrated low-loss three-dimensional spot-size converter and silicon photonic waveguides constructed by nanotuned Bosch process and oxidation,” Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol. 10, no. 2, April-June (2011)
  119. J.S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, Y. Shimogaki: “Fabrication of n-type GaN layers by the pulse injection method at 950C for intersubband devices,” Electrochemical and Solid-State Letters, v 14, n 4, p H143-H145, (2011).
  120. T. Fujiwara, Y. Nakano, and M. Sugiyama: “Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor- phase-diffusion-based selective-area pyramidal growth,” Physica Status Solidi A, vol. 208, no. 5, pp. 1203-1205, May (2011).
  121. M. Kubota, Y. Mita and M. Sugiyama: “Silicon sub-micron-gap deep trench Pirani vacuum gauge for operation at atmospheric pressure,” Journal of Micromechanics and Microengineering, v 21, n 4, 045034 (7 pp), April (2011)
  122. K. Ijichi, A. Fukuoka, A. Shimojima, M. Sugiyama, T. Okubo: “A combined top-down and bottom-up approach to fabricate silica films with bimodal porosity,” Materials Letters, v 65, n 5, p 828-831, March, (2011)
  123. S. Ueki, Y. Nishimori, H. Imamoto, M. Kubota, M. Sugiyama, H. Kawakatsu, S. Samukawa, G. Hashiguchi: “Method to evaluate the influence of etching damage on microcantilever surface on its mechanical properties,” Japanese Journal of Applied Physics, v 50, n 2, February (2011).
  124. J.S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, Y. Shimogaki, “Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770°C,” Journal of Crystal Growth, v 314, n 1, p 252-7, January (2011).
  125. Y. Wang, M. Deura, M. Sugiyama, Y. Nakano: “Post and in situ characterization of strain control and crystal quality in quantum well solar cell structure,” Materials Science Forum, v 675 677, p 73-76, January, (2011)
  126. M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi,” Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal organic source,” Japanese Journal of Applied Physics, vol. 50, no. 1, pp. 010105-1-5, January (2011).
  127. Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki, “Characterization of indium segregation in metalorganic vapor phase epitaxy-grown InGaP by Schottky barrier height measurement,” Japanese Journal of Applied Physics, vol. 50, no. 1, pp. 011201-1-3, January (2011).
  128. R. Onitsuka, M. Sugiyama, and Y. Nakano, “High material-efficiency MOVPE of GaAs without degradation of photovoltaic performance,” Journal of Crystal Growth, vol. 315, issue 1, pp. 53-56, January, (2011).
  129. M. Sugiyama, Kenichi Sugita, and Y. Wang, Y. Nakano: “In situ curvature monitoring for metalorganic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells,” Journal of Crystal Growth, vol. 315, issue 1, pp. 1-4, January, (2011).
  130. Y. Kondo, M. Deura, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama: “Dependences of initial nucleation on growth conditions of InAs on Si by micro-channel selective-area metal-organic vapor phase epitaxy,” Japanese Journal of Applied Physics, v 49, n 12, 125601 (5 pp), December (2010).
  131. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Monolithically integrated InGaN-based multicolor light-emitting diodes fabricated by wide-sripe selective area metal organic vapor phase epitaxy,” Applied Physics Express, vol. 3, no. 9, pp. 092104-1-3, September, (2010).
  132. S. Ueki, Y. Nishimori, H. Imamoto, T. Kubota, M. Sugiyama, S. Samukawa, G. Hashiguchi: “Analysis of a comb-drive actuator taking the depletion layer into consideration,” IEEJ Transactions on Sensors and Micromachines, v 130, n 8, p 388-393, (2010) (in Japanese).
  133. T. Kubota, O. Nukaga, S. Ueki, M. Sugiyama, Y. Inamoto, H. Ohtake, S. Samukawa: “200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching ,” Journal of Vacuum Science & Technology A, v 28, n 5, p 1169-74, Sept. (2010)
  134. K. Kitamura, T. Yatsui, T. Kawazoe, M. Sugiyama, M. Ohtsu: “Site-selective deposition of gold nanoparticles using non-adiabatic reaction induced by optical near-fields,” Nanotechnology, v 21, n 28, p 285302 (4 pp.), July (2010).
  135. T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano: “Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN”, Physica Status Solidi (A), vol. 207, no. 6, pp. 1375-1378, June (2010).
  136. T. Momose, M. Sugiyama, E. Kondoh, Y. Shimogaki: “Step coverage quality of Cu films by supercritical fluid deposition compared with chemical vapor deposition,” Jpn. J. Appl. Phys., vol 49, no. 5, pp. 05FF011-05FF016, May (2010).
  137. Y. Terada, Y. Shimogaki, Y. Nakano, and M. Sugiyama: “Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics”, Jan. J. Appl. Phys. Vol. 49, No. 4 pp. 04DF04 1-6 (2010).
  138. M. Yokoyama, T. Yasuda, H. Takagi, N. Miyata, Y. Urabe, H. Ishii, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi: “III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface,” Appl. Phys. Lett., vol. 96, 142106, 2010.
  139. Y. Terada, Y. Shimogaki, Y. Nakano, M. Sugiyama: “In situ anti-oxidation treatment in GaAs MOVPE by As desorption and AlP passivation with AlP”, J. Crystal Growth 312, pp. 1359-1363 (2010)
  140. R. Onitsuka, M. Sugiyama and Y. Nakano: "High material efficinecy MOVPE growth with in situ monitoring", J. Crystal Growth 312, pp. 1343-1347 (2010)
  141. Y. Wang, R. Onitsuka, M. Deura, W. Yu, M. Sugiyama, Y. Nakano: “In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells”, J. Cryst. Growth, vol. 312, no. 8, pp. 1364-1369, (2010)
  142. Y. Kondo, M. Deura, Y. Terada, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama: “Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si”, J. Cryst. Growth, vol. 312, no. 8, pp. 1348-1352, (2010)
  143. M. Deura, Y. Kondo, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama: “Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE”, J. Cryst. Growth, vol. 312, no. 8, pp. 1353-1358 (2010)
  144. M. Yokoyama, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, “Thin body III-V-semiconductor-on-insulator MOSFETs on Si fabricated using direct wafer bonding,” Appl. Phys. Express., vol. 2, 124501, 2009.
  145. M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express., vol. 2, 122201, 2009.
  146. H. Ishii, H, N. Miyata, Y. Urabe, T. Itatani, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Deura, M. Sugiyama, M. Takenaka, S. Takagi, “High electron mobility metal-lnsulator-semiconductor field-effect transistors fabricated on (111)-oriented InGaAs channels”, Appl. Phys. Express., vol. 2, 121201, 2009.
  147. H. Sodabanlu, J. S. Yang, M. Sugiyama, Y. Shimogaki, Y. Nakano: "Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer", Appl. Phys. Lett. 95, pp. 161908 1-3 (2009).
  148. J. S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, Y. Shimogaki: ”Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method", Appl. Phys. Lett. 95, pp. 162111 1-3 (2009)
  149. N. Iizuka, H. Yoshida, N. Managaki, T. Shimizu, S. Hassanet, C. Cumtornkittikul, M. Sugiyama, and Y. Nakano, “Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion”, OSA Optics Express, vol. 17, no. 25, pp. 23247-23253, December 7, 2009.
  150. Hong-Liang Lu, Y. Terada, Y. Shimogaki, Y. Nakano, M. Sugiyama, “In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy,” Appl. Phys. Lett. vol.95, no. 15, pp. 152103 1-3 (2009)
  151. Hong-Liang Lu, Xiao-Liang Wang, M. Sugiyama,Y. Shimogaki, “Investigation on GaAs surface treated with dimethylaluminumhydride,” Appl. Phys. Lett. vol.95, no. 21, pp. 212102 1-3 (2009)
  152. T. Shioda, Y. Tomita, M. Sugiyama, Y. Shimogaki, Y. Nakano: (Invited Paper) "Selective Area Metal-Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission", J. Selected Topics in Quantum Electronics, Vol. 15, No. 4, pp. 1053-1065 (2009).
  153. H. Sodabanlu, J. S. Yang, M. Sugiyama, Y. Shimogaki, Y. Nakano: "Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy", Appl. Phys. Express 2 (2009) 061002.
  154. J. S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, Y. Shimogaki: " Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy", Appl. Phys. Express 2 (2009) 051004.
  155. H. Z. Song, Y. P. Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki: " Zn and S Doping in GaAs Selective Area Growth by Metal?Organic Vapor Phase Epitaxy", Japanese Journal of Applied Physics, vol. 48, no. 3, p. 031101 (2009).
  156. Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano: "Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs", J. Crystal Growth, 311, (2009) pp. 2813-2816.
  157. T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano: "Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range", J. Crystal Growth, 311, (2009) pp. 2809-2812.
  158. M. Sugiyama, T. Shioda, Yuki Tomita, Takahisa Yamamoto, Yuichi Ikuhara and Y. Nakano: "Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth," Material Transactions, Vol.50 No.5 (2009), pp. 1085-1090.
  159. J. S. Yang, H. Sodabanlu, I. Waki, M. Sugiyama, Y. Nakano, Y. Shimogaki: "Process design of the pulse injection method for low-temperature metal organic vapor phase epitaxial growth of AlN at 800°C," J. Crystal Growth, 311, pp. 383-8 (2009).
  160. M. Deura, Y. Ikuhara, T. Yamamoto, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama "Dislocation-free InGaAs on Si(111) using micro-channel selective-area metalorganic vapor phase epitaxy," Appl. Phys. Express 2 (2009) 011101.
  161. T. Nakano, T. Shioda, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Competitive kinetics model to explain surface segregation of indium during InGaP growth by using metal organic vapor phase epitaxy”, Japanese Journal of Applied Physics, vol. 48, no. 1, pp. 011101-1-5 (2009).
  162. Y. Wang, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Kinetic analysis of InAsP by metalorganic vapor phase epitaxy selective area growth technique”, Japanese Journal of Applied Physics, vol. 48, no. 4, pp. 041102-1-5 (2009).
  163. Salah Ibrahim, Xueliang Song, M. Sugiyama, and Y. Nakano: “Static optical cross phase modulation in active multimode interference couplers”, Optical and Quantum Electronics, vol. 40, no. 5-6, pp. 419-424 (2008).
  164. T. Momose, T. Ohkubo, M. Sugiyama, Y. Shimogaki, " Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry", Thin Solid Films, 517, p p 674-80 (2008)
  165. Y. Terada, M. Deura, M. Sugiyama, M. Sugiyama, Y. Nakano, "In situ passivation of GaAs surface with aluminum oxide with MOVPE," J. Crystal Growth, 310, pp. 4808-12 (2008).
  166. Y. Tokumoto, N. Shibata, T. MIzoguchi, M. Sugiyama, J. S. Yang, Y. Shimogaki, T. Yamamoto, Y. Ikuhara, " High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films," J. Materials Research, 23, pp. 2188-94 (2008).
  167. H. Song; Y. Wang; M. Sugiyama, Y. Nakano, Y. Shimogaki, "Non-linear surface reaction kinetics in GaAs selective area MOVPE," J. Crystal Growth, 310, pp. 4731-5 (2008).
  168. T. Momose, M. Sugiyama, E. Kondoh and Y. Shimogaki: "Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition," Appl. Phys. Express 1 (2008) 097002.
  169. M. Deura, Y. Shimogaki, Y. Nakano, M. Sugiyama: "Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS," J. Crystal Growth, 310, pp. 4736?4740 (2008).
  170. M. Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama: "Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si," J. Crystal Growth 310, pp. 4768?4771 (2008)
  171. Y. Wang, H. Song, M. Sugiyama, Y. Nakano, Y. Shimogaki, " Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique", Jpn. J. Appl. Phys. 47, pp. 8269-8274, (2008).
  172. Y. Wang, H. Song, M. Sugiyama, Y. Nakano, Y. Shimogaki, " Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique", Jpn. J. Appl. Phys. 47, pp. 7788-7792, (2008).
  173. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "Kinetic Analysis of InN Selective Area Metal?Organic Vapor Phase Epitaxy," Appl. Phys. Express, 1, p. 071102 (2008).
  174. T. Tanemura, M. Takenaka, A. Al Amin, K. Takeda, T. Shioda, M. Sugiyama, Y. Nakano: " InP-InGaAsP integrated 1 × 5 optical switch using arrayed phase shifters," IEEE Photon. Technol. Lett., 20, pp. 1063-5 (2008)
  175. S. Ibrahim, X. Song, M. Sugiyama and Y. Nakano: "Static optical cross phase modulation in active multimode interference couplers", Optical and Quantum Electronics, 40, pp. 419-424 (2008)
  176. I. T. Im, M. Sugiyama, Y. Nakano, Y. Shimotaki, "Multiscale Model of the GaAs MOVPE Process for the Fast Numerical Simulation," Chemical Product and Process Modeling, 3 (2008), 41.
  177. T. Hoshii, M. Deura, M. Sugiyama, R. Nakane, S. Sugahara, M. Takenaka, Y. Nakano, and S. Takagi, "Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas," phys. stat. sol. (c) 5, 2733?2735 (2008)
  178. R. Onitsuka, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics”, J. Crystal Growth, 310, pp. 3042-3048 (2008).
  179. T. Nakano, T. Shioda, E. Abe, M. Sugiyama, N. Enomoto, Y. Nakano and Y. Shimogaki: "Abrupt InGaPGaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy," Appl. Phys. Lett. 92, 11, 112106 (2008).
  180. T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Kinetics of subsurface formation during metal-organic vapor phase epitaxy growth of InP and InGaP”, Jpn. J. Appl. Phys. 47, pp. 1473-1478, (2008).
  181. T. Shioda, Y. Tomita, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "GaN selective area metal-organic vapor phase epitaxy: Prediction of growth rate enhancement by vapor phase diffusion model," Jpn. J. Appl. Phys., 46, 41-44, L1045-L1047 (2007).
  182. T. Momose, M. Sugiyama and Y. Shimogaki: "In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper", Jpn. J. Appl. Phys. 47, 2, 885-890 (2008).
  183. T. Shimizu, C. Kumtornkittikul, N. Iizuka, N. Suzuki, M. Sugiyama, and Y. Nakano: "Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition", Jpn. J. Appl. Phys., 46, 10A, 6639-6642 (2007).
  184. M. Deura, M. Sugiyama, T. Nakano, Y. Nakano, and Y. Shimogaki: "Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy ", Jpn. J. Appl. Phys., 46, 10A, 6519-6524 (2007).
  185. J-S. Yang, H. Sodabanlu, I. Waki, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C ", Jpn. J. Appl. Phys., 46, 38, L927-L929 (2007).
  186. R. Shimizu, M. Ogino, M. Sugiyama, Y. Shimogaki,"Predictive model extraction for polysilicon low-pressure chemical vapor deposition in a commercial scale Reactor",J. Electrochem. Soc.,154, 6,D328-33,(2007)
  187. C. Kumtornkittikul, T. Shimizu, N. Iizuka, N. Suzuki, M. Sugiyama, Y. Nakano, AlN waveguide with GaN/AlN quantum wells for all-optical switch utilizing intersubband transition, Jpn. J. Appl. Phys., 46, pp. L352-L355 (2007).
  188. J. Darja, M. J. Chan, S. Wang, M. Sugiyama, and Y. Nakano: “Four channel ridge DFB laser array for 1.55μm CWDM systems by wide-stripe selective area MOVPE”, IEICE Transactions on Electronics, vol. E90-C, no. 5, pp. 1111-1117, May (2007).
  189. A. Al Amin, K. Sakurai, T. Shioda, M. Sugiyama, Y. Nakano: Fabrication of a monolithically integrated WDM channel selector using single step selective area MOVPE and its characterization, IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, E90-C, pp. 1124-8 (2007).
  190. H. Song, I. T. Im, M. Sugiyama, Y. Nakano and Y. Shimogaki: Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism, J. Crystal Growth, 298, pp. 32-6 (2007).
  191. M. Sugiyama, H. Song, M. Deura, Y. Nakano and Y. Shimogaki: Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs, Electrochem. Solid State Lett. 10, pp. H123-126 (2007).
  192. O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki and Y. Nakano: High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties, J. Crystal Growth, 298, pp. 85-9 (2007).
  193. T. Shioda, H. Song, M. Sugiyama, Y. Shimogaki and Y. Nakano: Vapor Phase Diffusion and Surface Diffusion Combined Model for InGaAsP Selective Area Metal-Organic Vapor Phase Epitaxy, J. Crystal Growth, 298, pp. 37-40 (2007).
  194. R. Onitsuka, T. Shioda, H. Song, M. Sugiyama, Y. Shimogaki and Y. Nakano: Reactor-scale uniformity of selective-area performance in InGaAsP system, J. Crystal Growth, 298, pp. 59-63 (2007).
  195. H. Song, M. Sugiyama, Y. Nakano and Y. Shimogaki: Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique, J. Electrochemical. Soc. 154, pp. H91-H96 (2007).
  196. R. Hayashi, M. Onishi, M. Sugiyama, S. Koda and Y. Oshima: Kinetic analysis on alcohol concentration and mixture effect in supercritical water oxidation of methanol and ethanol by elementary reaction model, J. Supercritical Fluids, 40, pp. 74-83 (2007).
  197. J. Darja, M. J. Chan, M. Sugiyama and Y. Nakano: Four channel DFB laser array with integrated combiner for 1.55μm CWDM systems by MOVPE selective area growth, IEICE Electronics Express, 3, pp.522-528 (2006).
  198. H. Song, X. Song, M. Sugiyama, Y. Nakano and Y. Shimogaki: “Effect of Surface Misorientation on the Kinetics of GaAs MOVPE Examined Using Selective Area Growth”, Electrochem. Solid State Lett. 9, pp. G104-106 (2006).
  199. S. Koda, K. Maeda, K. Sugimoto, M. Sugiyama: Oxidation reactions of solid carbon in supercritical water, Comb. Sci. Technol., 178, pp. 487-507 (2006).
  200. H. Song, X. Song, M. Sugiyama, Y. Nakano and Y. Shimogaki: Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate, J. Crystal Growth, 287, pp. 664-667 (2006).
  201. M. Sugiyama, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano and Y. Shimogaki: Control of abnormal edge growth in selective area MOVPE of InP, J. Crystal Growth, 287, pp. 668-672 (2006).
  202. M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka, Y. Egashira, K. Yamashita, H. Komiyama and Y. Shimogaki: Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology, Thin Solid Films, 498, pp. 30-35 (2006).
  203. T. Shioda, T. Doi, A. Al Amin, X. Song, M. Sugiyama, Y. Shimogaki and Y. Nakano: Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition, Thin Solid Films, 498, pp. 174-178 (2006).
  204. N. Waki, T. Nakano, M. Sugiyma, Y. Nakano and Y. Shimogaki: Role of surface diffusion during selective area MOVPE growth of InP, Thin Solid Films, 498, pp. 163-166 (2006).
  205. C. Kumtornkittikul, M. Sugiyama and Y. Nakano: GaN/AlN multiple quantum wells grown in GaN-AlN waveguide structures by metalorganic vapor phase epitaxy, J. Electron. Mater., 35, 744-749 (2006).
  206. M. Sugiyama, A. Al Amin, K. Sakurai, X. Song, F. C. Yit, N. Li, I. Waki, Y. Shimogaki and Y. Nakano: Dry etching technique of compound semiconductors for optical device applications, Shinku, 48, 511-518 (2005),in Japanese.
  207. T. Arakawa, Y. Awa, T. Ide, N. Haneji, K. Tada, M. Sugiyama, H. Shimizu, Y. Shimogaki and Y. Nakano: Improved etched surface morphology in electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow, Jpn. J. Appl. Phys. 44, pp. 5819-5823 (2005).
  208. M. Fujie, H. Ohmura, C. Konagai, K. Nittoh, M. Sugiyama, K. Maeda and S. Koda, Direct observation of carbon particle SCWO progress by X-ray radiography, AIChE. J., 51(10), pp. 2865-2868 (2005).
  209. T. Momose, M. Sugiyama and Y. Shimogaki: Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology, Jpn. J. Appl. Phys. 44, L1199-L1202 (2005).
  210. Ik-Tae Im, M. Sugiyama, Y. Shimogaki, Y. Nakano: A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process, J. Crystal Growth, 276, pp. 431-438 (2005).
  211. S. Inasawa, M. Sugiyama and Y. Yamaguchi: Bimodal size distribution of gold nanoparticles under picosecond laser pulses, J. Phys. Chem. B 109, 9404-9410 (2005).
  212. S. Inasawa, M. Sugiyama and Y. Yamaguchi: Laser-Induced Shape Transformation of Gold Nanoparticles below the Melting Point: The Effect of Surface Melting, J. Phys. Chem. B 109, 3104-3111 (2005).
  213. T. Nakano, M. Sugiyama, Y. Nakano and Y. Shimogaki: The Role of the Surface Adsorption Layer during MOVPE Growth Analyzed by the Flow Modulation Method, J. Crystal Growth, 272, 15-23 (2004).
  214. N. Li, I. Waki, C. Kumtornkittikul, J. H. Liang, M. Sugiyama, Y. Shimogaki, Y. Nakano: Fabrication of AlGaN-based waveguides by inductively coupled plasma etching, Jpn. J. Appl. Phys. 43, L1340-L1342 (2004).
  215. R. Shimizu, M. Ogino, M. Sugiyama and Y. Shimogaki: Analysis and modeling of low pressure chemical vapor deposition of phosphorus-doped polysilicon in commercial scale reactor, J. Vac. Sci. Technol. A22, 1763-1766 (2004).
  216. M. Sugiyama, S. Tagawa, H. Ohmura and S. Koda: Supercritical water oxidation of a carbon particle by Schlieren photography, AIChE. J., 50, pp. 2082-2089 (2004).
  217. A. Morita, M. Sugiyama, H. Kameda, D. R. Hanson and S. Koda: Mass accommodation coefficient of water: Molecular dynamics simulation and revised analysis of droplet train/flow reactor experiment. J. Phys. Chem. B 108, pp. 9111-9120 (2004). Times cited: 23
  218. T. Hirose, T. Omatsu, M. Sugiyama, S. Inasawa and S. Koda: Au-nano-particles production by pico-second ultra-violet laser deposition in Au-ion doped PMMA film, Chem. Phys. Lett. 390, pp. 166-169 (2004).
  219. D. R. Hanson, M. Sugiyama, A. Morita: Revised Kinetics in the Droplet-Train Apparatus Due to a Wall Loss, J. Phys. Chem. A, 108, 3739-3744 (2004).
  220. M. Sugiyama, M. Kataoka, H. Ohmura, H. Fujiwara and S. Koda: Oxidation of carbon particles in supercritical water: rate and mechanism, Ind. Eng. Chem. Res., 43, pp. 690-699 (2004)
  221. M. Sugiyama, H. J. Oh, Y. Nakano and Y. Shimogaki: Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE, J. Crystal Growth, 261 411-418 (2004).
  222. H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki: The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials, J. Crystal Growth, 261 (2-3) 419-426 (2004).
  223. I. T. Im, H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki: Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor, J. Crystal Growth, 261 (2-3) 214-224 (2004).
  224. S. Inasawa, M. Sugiyama and S. Koda: Size Controlled Formation of Gold Nanoparticles Using Photochemical Growth and Photothermal Size Reduction by 308nm Laser Pulses, Jpn. J. Appl. Phys. 42 (10) 6705-6712 (2003).
  225. H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki: Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth, Jpn. J. Appl. Phys. 42 (10) 6284-6291 (2003).
  226. M. Sugiyama, H. J. Oh, Y. Nakano and Y. Shimogaki: Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE, J. Crystal Growth, 261 411-418 (2004).
  227. H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki: Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 42 (10A) L1195-L1197 (2003).
  228. H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki: Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis, Jpn. J. Appl. Phys. 42 (4A) L359-L361 (2003).
  229. T. Hirose, T. Omatsu, M. Sugiyama, S. Inasawa, A. Takami, M. Tateda and S. Koda: Diffraction Efficiency of Holographic Grating Formation in Au Nano Particle-Doped Sol-Gel Silica Film by Laser Irradiation, Jpn. J. Appl. Phys, 42, pp. 1288-1289 (2003).
  230. A. Morita, M. Sugiyama and S. Koda: Gas-Phase Flow and Diffusion Analysis of the Droplet-Train/Flow-Reactor Technique for the Mass-Accommodation Processes, J. Phys. Chem A, 107(11), pp. 1749-1759 (2003).
  231. M. Sugiyama, S. Koda and A. Morita: Numerical analysis of gas-phase diffusion resistance in a droplet train apparatus, Chemical Physics Letters, 362, pp. 56-62 (2002).
  232. M. Sugiyama, H. Ohmura, M. Kataoka and S. Koda: Shadowgraph Observation of Supercritical Water Oxidation Progress of a Carbon Particle, Industrial and Engineering Chemistry Research, 41 No. 12 pp. 3044-3048 (2002).
  233. M. Sugiyama, H. Okazaki and S. Koda: Size and Shape transformation of TiO2 nanoparticles by irradiation of 308-nm laser beam, Japanese Journal of Applied Physics, 41 No.7A, pp. 4666-4674 (2002).
  234. M. Sugiyama, H. Ogawa, Y. Sato, H. Itoh, J. Aoyama, Y. Horiike, H. Komiyama and Y. Shimogaki: Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy: Theoretical Optimization Procedure (3), Japanese Journal of Applied Physics, 41 No.2A, pp. 570-576 (2002).
  235. M. Sugiyama, S. Inasawa, T. Hirose, T. Yonekawa, A. Takami, T. Omatsu and S. Koda: Optical recording media using laser-induced size reduction of Au nanoparticles, Applied Physics Letters, 79, pp. 1528-1530 (2001).
  236. M. Sugiyama, T. Iino, H. Itoh, J. Aoyama, H. Komiyama and Y. Shimogaki: Effect of underlayers on the morpholpgy and orientation of aluminum films prepared by chemical vapor deposition using dimethylaluminumhydride, Japanese Journal of Applied Physics, 38 No. 12B pp. L1528-1531 (1999).
  237. M. Sugiyama, T. Nakajima, T. Tanaka, H. Itoh, J. Aoyama, Y.Egashira, K. Yamashita, H. Komiyama and Y. Shimogaki: Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on ab initio calculations: theoretical optimization procedure (2), Japanese Journal of Applied Physics, 39 No. 12A, pp.6501-6512 (2000)
  238. M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama and Y. Shimogaki: Reaction analysis of aluminum chemical vapor deposition from dimethylaluminumhydride using tubular reactor and Fourier transform infrared spectroscopy: theoretical process optimization procedure (1), Japanese Journal of Applied Physics, 39 No. 3A, pp. 1074-1079 (2000).
  239. M. Sugiyama, O. Feron, S. Sudo, Y. Nakano, K. Tada, H. Komiyama and Y. Shimogaki: Kinetics of GaAs MOCVD studied by numerical analysis based on experimental reaction data, Japanese Journal of Applied Physics, 39 No. 4A, pp. 1642-1649 (2000).
  240. O. Feron, M. Sugiyama, W. Asawamethapant, N. Futakuchi, Y. Feurprier, Y. Nakano and Y. Shimogaki: MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor, Applied Surface Science, 159-160 No. 1-4, pp. 318-327 (2000).
  241. S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama and K. Tada: In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry, Thin Solid Films, vol.313-314, pp. 604-608 (1998).
  242. M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, K. Sugawara, K. Tada and H. Komiyama: Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spectroscopy, Applied Surface Science, vol.117-118, pp.746-52 (1997).
  243. K. Nishioka, M. Sugiyama, M. Neduka, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama: Optimization of electron cyclotron resonance reactive ion beam etching reactors for dry etching of GaAs with Cl2, Journal of Electrochemcal Society,vol.144, no.9, 3191-3197 (1997).
  244. M. Sugiyama,T. Yamaizumi, M. Neduka, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama: Simple kinetic model of ECR reactive ion beam etching reactor for the optimization of GaAs etching process, Japanese Journal of Applied Physics,vol.35, pp. 1235-1241, (1996).
  245. M. Sugiyama, T. Yamaizumi, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama: A simple kinetic model for the optimization of electron cyclotron resonance/reactive ion beam etching performance for GaAs, Applied Physics Letters, vol.67, pp. 897-899 (1995).

International conferences (proceedings and presentations)

  1. A. Ubukata, H. Sodabanlu, K. Watanabe, S. Koseki, Y. Yano, T. Tabuchi, T. Sugaya, K. Matsumoto, Y. Nakano, M. Sugiyama, “Extremely Rapid GaAs Growth by MOVPE for Low-Cost PV Applications,” 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) (July 30-Aug. 4, 2017, Santa Fe, USA).
  2. K. Watanabe, E. Nagaoka, D. Yamashita, K. Toprasertpong, Y. Nakano, M. Sugiyama, “Development of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bonding,” Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, p 53 (June 13, 2017, Tokyo)
  3. T. Nakata, K. Watanabe, H. Sodabanlu, D. Kimura, N. Miyashita, Y. Okada, Y. Nakano, M. Sugiyama, “Analysis of Deposited Residues and Its Cleaning Process on GaAs Substrate after Epitaxial Lift-Off,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 238.
  4. K. Toprasertpong, B. Kim, Y. Nakano, M. Sugiyama, “Carrier Collection Model and Design Rule for Quantum Well Solar Cells,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 626.
  5. H. Sodabanlu, K. Watanabe, A. Ubukata, T. Sugaya, M. Sugiyama, Y. Nakano, “Extremely high-speed GaAs growth by MOVPE for low-cost PV application,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 650.
  6. B. Kim, K. Toprasertpong, O. Supplie, A. Paszuk, T. Hannappel, Y. Nakano, M. Sugiyama, “Efficiency of GaAsP/Si Two-junction Solar Cells with Multi-Quantum Wells: a Realistic Modeling with Carrier Collection Efficiency,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 722.
  7. A. Paszuk, O. Supplie, S. Bruckner, M. M. May, A. Dobrich, A. Nagelein, B. Kim, Y. Nakano, M. Sugiyama, P. Kleinschmidt, T. Hannappel, “In situ control over the sublattice orientation of heteroepitaxially grown single-domain GaP/Si:As virtual substrates for tandem absorbers,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 726.
  8. Lin Zhu, A. Reddy, K. Watanabe, M. Sugiyama, Y. Nakano, H. Akiyama, “Design of InGaP/GaAs/InGaAs multi-junction cells with reduced layer thicknesses using light-trapping rear texture,” IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (June 25-30, 2017, Washington DC, USA) 980.
  9. M. Sugiyama, (Invited) “III-V Compound Semiconductor Nano-Epitaxial Structures for High-Efficiency Photovoltaic and Solar-to-Chemical Energy Conversion,” The International Conference on Materials for Advanced Technologies (ICMAT) 2017 (June 18-12, 2017, Singapole) F08-3.
  10. Y. Imazeki, Y. Iwai, A. Nakamura, K. Koike, S. Sato, T. Ohshima, K. Fujii, M. Sugiyama, Y. Nakano, Band Alignment at n-GaN/electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting,” 231st ECS meerig (May 28 - June 1, 2017, New Orleans, USA) 1203.
  11. B. Kim, O. Supplie, T. Watanabe, A. Paszuk, T. Hannappel, Y. Nakano, M. Sugiyama, “Double-layer step formation on Si (100) surfaces by moderate-temperature annealing coupled with TBA exposure,” Compound Semiconductor Week 2017 (May 14-18, 2017, Berlin, Germany) P1.24.
  12. A. Paszuk, O. Supplie, S. Bruckner, M. M. May, A. Dobrich, A. Nagelein, B. Kim, Y. Nakano, M. Sugiyama, P. Kleinschmidt, T. Hannappel, “In-situ control over dimer orientation on Si(100) surfaces in arsenic ambient and its impact on the sublattice orientation of subsequently grown GaP,” Compound Semiconductor Week 2017 (May 14-18, 2017, Berlin, Germany) D6.6.
  13. Y. Imazeki, Y. Iwai, A. Nakamura, K. Koike, K. Watanabe, K. Fujii, M. Sugiyama, Y. Nakano, “Photo-Induced Gain of Open-Circuit-Potential (OCP) in GaN Photoelectrodesfor Characterizing Defects and Photoelectrochemical Activity,” MRS Spring meeting 2017 (Apr. 17-21, 2017, Phoenix, USA) ES7.9.03.
  14. K. Fujii, S. Nakamura, Y. Miwata, S. Wada, K. Nishioka, Y. Nakano, M. Sugiyama, “User-on-Demand Power Supply System Operation Using the Concept of High Performance Solar to Hydrogen Conversion Device,” MRS Spring meeting 2017 (Apr. 17-21, 2017, Phoenix, USA) ES7.12.06.
  15. M. Sugiyama, (Invited), “III-V nano-epitaxial MOVPE for high-efficiency and low-cost solar cells,” MRS Spring meeting 2017 (Apr. 17-21, 2017, Phoenix, USA) ES11.7.01.
  16. A. Delamarre, J. Jia, P. Verdier, K. Watanabe, M. Sugiyama, Y. Nakano, J. F. Guillemoles, “Characterisation of multi-junction solar cells by mapping of the carrier transport efficiency using luminescence emission,” Proceedings of the SPIE, v 10099, p 100990Z (6 pp.) (2017).
  17. B. Galvani, F. Michelini, M. Bescond, M. Sugiyama, J. F. Guillemoles, N. Cavassilas, “Minibands modeling in strained balanced InGaAs/GaAs/GaAsP cells,” Proceedings of the SPIE, v 10099, p 100990X (6 pp.) (2017).
  18. A. Delamarre, P. Verdier, K. Watanabe, M. Sugiyama, Y. Nakano, J. F. Guillemole, “Optical mapping of the transport efficiency in multi-junction solar cells,” 26th International Photovoltaic Science and Engineering Conference (PVSEC-26) (Oct. 24-28, 2016, Singapole) 1.3.1e.
  19. W. Yanwachirakul, N. Miyashita, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Okada and Y. Nakano, “Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap,” 26th International Photovoltaic Science and Engineering Conference (PVSEC-26) (Oct. 24-28, 2016, Singapole) 1.1.3e
  20. K. Matsuochi, T. Nakamura, H. Takeda, K. Toprasertpong, M. Sugiyama, Y. Nakano, H. Suzuki, T. Ikari, A. Fukuyama “Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p?i?n GaAs solar cells”, 26th International Photovoltaic Science and Engineering Conference (PVSEC-26) (Oct. 24-28, 2016, Singapole) 3.4.2d.
  21. Hao Xu, K. Toprasertpong, A. Delamarre, H. Sodabanlu, K. Watanabe, Y. Nakano and M. Sugiyama, “Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells,” 26th International Photovoltaic Science and Engineering Conference (PVSEC-26) (Oct. 24-28, 2016, Singapole) 3.4.2e.
  22. H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano, “Effects of various dopants on properties of GaAs tunneling junctions and p?i?n solar cells,” 26th International Photovoltaic Science and Engineering Conference (PVSEC-26) (Oct. 24-28, 2016, Singapole) 3.4.2b.
  23. A. Nakamura, K. Fujii, Y. Nakano and M. Sugiyama, “Visible Light Responding InGaN/AlN/GaN Polarization Engineered Water Splitting Photocathode”, International Workshop on Nitride Semiconductors (IWN 2016), Oral, 6th October, 2016, Orlando, USA.
  24. M. Sugiyama, D. Yamashita, K. Watanabe, M. Fujino, T. Suga, Y. Nakano, “(Invited) Analysis of Defect Levels at GaAs/GaAs Surface-Activated Bonding Interface for Multi-Junction Solar Cells,” ECS Transactions 75(9):33-38, Sep. (2016)
  25. K. Koike, A. Nakamura, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, and K. Fujii, “Superior Catalytic Activity of NiO Island on n-type GaN Photoanode Compared with NiO Protection Layer Structure”, 21st International Conference on Photochemical Conversion and Storage of Solar Energy Poster Session, July 25 and 26, Saint Petersburg, Russia
  26. Y. Iwai, A. Nakamura, K. Koike, Y. Nakano, K. Fujii, and M. Sugiyama, “Impact of surface modification on photo-induced Open-Circuit-Potential (OCP) of GaN anode”, 21st International Conference on Photochemical Conversion and Storage of Solar Energy Poster Session, July 25 and 26, Saint Petersburg, Russia.
  27. A. Nakamura, M. Suzuki, K. Fujii, Y. Nakano and M. Sugiyama, ”Low-Temperature Growth of Al(Ga)N/GaN Tunnel Junction with Abrupt Interfaces and Low Dislocation Density for Polarization Engineered Water Splitting Photocathode,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 2C-1.2
  28. T. Arakawa, M. Mathew, A. Chauhan, K. Miyajima, Y. Nakano and M. Sugiyama, “Mechanism of Broadband Visible Emission from InGaN/nano-AlN LED by Temperature-Dependent Photoluminescence,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 2C-1.4
  29. T. Watanabe, M. Takeuchi, Y. Nakano and M. Sugiyama, “Measurement of 3-Dimensional Dopant Distribution in InGaAs Microdiscs Grown Selectively on Si (111),” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 2C-2.2
  30. H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano, “Growth of C-Doped GaAs in Planetary MOVPE Reactor Using Tertiarybutyl-Arsine and Carbon-Tetrachloride,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) PS-1.6
  31. M. Mathew, T. Arakawa, A. Chauhan, K. Singh and M. Sugiyama, “Effect of Superlattice Layers on Bimodal LEDs Using InGaN/nano-AlN Broadband Emitter,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) PS-1.29
  32. K. Toprasertpong, T. Inoue, A. Delamarre, K. Watanabe, M. Paire, L. Lombez, J.-F. Guillemoles, M. Sugiyama and Y. Nakano, “Electroluminescence-Based Quality Characterization of Quantum Wells for Solar Cell Applications,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 3A-2.2
  33. M. Suzuki, A. Nakamura, Y. Nakano and M. Sugiyama, “Mechanism of Stress Control for GaN Growth on Si Using AlN Interlayers,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 4C-1.3
  34. H. Cho, K. Toprasertpong, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano, “Stability and Controllability of InGaAs/GaAsP Wire-on-Well (WoW) Structure for Multi-Junction Solar Cells,” 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-18) (July 10-15, 2016, San Diego, USA) 5A-2.2
  35. T. Watanabe, Y. Nakano, M. Sugiyama, “Anomalous Ga incorporation into InGaAs microdiscs selectively grown on Si (111),” 28th International Conference on Indium Phosphide & Related Materials (IPRM), (June 26-30, 2016, Toyama, Japan)
  36. A. Cattoni, Hung-Ling Chen, N. Vandamme, J. Goffard, A. Lemaitre, A. Delamarre, B. Behaghel, K. Watanabe, M. Sugiyama, J.-F. Guillemoles, S. Collin, “200nm-thick GaAs solar cells with a nanostructured silver mirror,” IEEE 43th Photovoltaic Specialist Conference, PVSC 2016 (June 5-10, 2016, Portland, USA) 929.
  37. D. Yamashita, K. Watanabe, M. Fujino, T. Hoshii, Y. Okada, Y. Nakano, T. Suga, M. Sugiyama, “Admittance Spectroscopy Analysis on the Interfacial Defect Levels in the Surface-Activated Bonding of GaAs,” IEEE 43th Photovoltaic Specialist Conference, PVSC 2016 (June 5-10, 2016, Portland, USA) 628.
  38. K. Watanabe, T. Inoue, K. Toprasertpong, A. Delamarre, H. Sodabanlu, J.-F. Guillemoles, M. Sugiyama, Y. Nakano, “Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure,” IEEE 43th Photovoltaic Specialist Conference, PVSC 2016 (June 5-10, 2016, Portland, USA) 321.
  39. K. Toprasertpong, T. Inoue, A. Delamarre, K. Watanabe, M. Sugiyama, Y. Nakano, “Photocurrent Collection Mechanism and Role of Carrier Distribution in p-i-n Quantum Well Solar Cells,” IEEE 43th Photovoltaic Specialist Conference, PVSC 2016 (June 5-10, 2016, Portland, USA) 48.
  40. M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, K. Watanabe and Y. Nakano, (Invited) “InGaAs/GaAsP Quantum Wells and Wires for High-Efficiency Photovoltaic Applications,” 16th International Conference On Nanotechnology (IEEE Nano 2016) (Aug 22-26, 2016, Sendai, Japan) p 519-520.
  41. M. Sugiyama, T. Kasidit, H. Fujii, H. Cho, H. Sodabanlu, K. Watanabe and Y. Nakano, (Invited) “Metalorganic Vapor-Phase Epitaxy of InGaAs/GaAsP Quantum Wells and Wires for High-Efficiency Photovoltaic Applications,” 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) (Aug 7-12, 2016, Nagoya, Japan)
  42. M. Sugiyama, (Invited) “Strain-balanced superlattice for high-efficiency solar cells,” International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2016) (May 29 - June 3, Graz, Austria)
  43. M. Sugiyama, (Invited) “24.4% Solar-to-hydrogen energy conversion by high-efficiency photovoltaic and water electrolysis,” 18th Photonic North Conference (May 24-26, Quebec City, Canada)
  44. M. Sugiyama, A. Nakamura, Y. Ota, K. Koike, Y. Hidaka, K. Nishioka, and K. Fujii, “24.4% Solar-to-Hydrogen Energy Conversion by Concentrator Photovoltaic Electrochemical Cell (CPEC)”, 12th International Conference on Concentrator Photovoltaics, Poster, April 21, 2016, Freiburg, Germany
  45. M. Sugiyama, A. Nakamura, Y. Ota, K. Koike, Y. Hidaka, K. Nishioka, K. Fujii, “24.4% STH efficiency under natural sunlight by the optimized connection of concentrator photovoltaic modules and electrochemical cells,” MRS Spring meeting (Mar. 28 ? Apr. 1, 2016, Phoenix, USA) EE2.8.04.
  46. A. Fukuyama, T. Nakamura, T. Usuki, K. Matsuochi, K. Toprasertpong, M. Sugiyama, Y. Nakano, T. Ikari, “Carrier collection mechanism in the strain-balanced InGaAs/GaAsP super-lattice solar cells by investigating the temperature changes of the surface photovoltage, photoluminescence, and piezoelectric photothermal signals,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, SPIE Photonics West (Feb. 13-18, 2016, San Francisco, USA) 9743-13.
  47. T. Usuki, K. Matsuochi, T. Nakamura, K. Toprasertpong, A. Fukuyama, M. Sugiyama, Y. Nakano, T. Ikari, “Observation of mini-band formation in the ground and high-energy electronic states of super-lattice solar cells,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, SPIE Photonics West (Feb. 13-18, 2016, San Francisco, USA) 9743-36.
  48. K. Toprasertpong, K. Watanabe, T. Kita, M. Sugiyama, Y. Nakano, “Effective drift mobility approximation in multiple quantum-well solar cells,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, SPIE Photonics West (Feb. 13-18, 2016, San Francisco, USA) 9743-39.
  49. T. Inoue, K. Toprasertpong, A. Delamarre, K. Watanabe, M. Paire, L. Lombez, J.-F. Guillemoles, M. Sugiyama, Y. Nakano, “Quasi-Fermi level splitting evaluation based on electroluminescence analysis in multiple quantum-well solar cells for investigating cell performance under concentrated light,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, SPIE Photonics West (Feb. 13-18, 2016, San Francisco, USA) 9743-40.
  50. A. Delamarre, L. Lombez, K. Watanabe, M. Sugiyama, J.-F. Guillemoles, “Spatial carrier collection efficiency imaging by luminescence,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25) (November 15-20, 2015, Busan, Korea) GAS-O-03.
  51. M. Suzuki, A. Nakamura, M. Sugiyama and Y. Nakano, “Mechanism of stress control for GaN growth on Si using AlN interlayers,” The 6th International Symposium on Growth of III-Nitrides (ISGN-6) (Nov. 8-13, 2015, Hamamatsu, Japan) Tu-A18.
  52. Y. Sato, H. Takahashi, Y. Iyechika, M. Suzuki, and M. Sugiyama, “InGaN/GaN MQW PL Wavelength Dependence on GaN/Si Template Quality,” The 6th International Symposium on Growth of III-Nitrides (ISGN-6) (Nov. 8-13, 2015, Hamamatsu, Japan) LN-Tu-6.
  53. A. Nakamura, M. Suzuki, K. Fujii, M. Sugiyama, and Y. Nakano, “Enhanced photoelectrochemical properties of u-GaN/AlN/n-GaN photocathode with improved GaN/AlN interface abruptness,” The 6th International Symposium on Growth of III-Nitrides (ISGN-6) (Nov. 8-13, 2015, Hamamatsu, Japan) We-B14.
  54. M. Sugiyama, H. Sugiyama, T. Katoh, K. Toprasertpong, H. Sodabanlu, K. Watanabe, D. Alonso-Alvarez, N. J. Ekins-Daukes and Y. Nakano, “Quantum Wire-on-Well (Wow) Cell with Long Carrier Lifetime for Efficient Carrier Transport,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 1AO.3.1.
  55. A. Delamarre, J.F. Guillemoles, Y. Wang, Y. Nakano and M. Sugiyama, “Influence of the Host pin Diode Material in Multi-Quantum Well Solar Cells,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 1AO.3.3.
  56. D. Yamashita, G. Kono, T. Hoshii, K. Watanabe, M. Sugiyama, T. Suga, Y. Okada and Y. Nakano, “The Effect of Fast-Atom-Beam Ion Species in the Surface Activated Bonding Process for Multi-Junction Solar Cells,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 4BO.10.1.
  57. K. Watanabe, T. Inoue, H. Sodabanlu, M. Sugiyama and Y. Nakano, “Self-Organized Texture of GaAs by Wet Etching for Light Trapping in MQW Solar Cell,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 1BV.7.5.
  58. S. Naitoh, N. Miyashita, K. Toprasertpong, R. Tamaki, T. Hoshii, M. Sugiyama and Y. Okada, “Effect of Si Doping on Performance of Quantum Dot Solar Cells,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 1BV.7.39.
  59. N. Vandamme, J. Goffard, B. Behaghel, A. Cattoni, A. Lemaitre, S. Collin, A. Delamarre, M. Sugiyama and J.F. Guillemoles, “Ultrathin GaAs Solar Cells with a Nanostructured Silver Mirror,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) (Sep. 13-18, 2015, Hamburg, Germany) 1BV.7.40.
  60. M. Sugiyama, (Invited) “Embedded InGaAs lateral nanowires for high-efficiency solar cells,” SemiconNano2015 (September 6- 11, 2015 Hsinchu, Taiwan), I-7
  61. A. Nakamura, K. Fujii, M. Sugiyama, Y. Nakano, “Numerical Investigation on a Novel +c-Plane InGaN Based Solar Cell with a Polarization Induced Tunnel Junction,” 11th International Conference on Nitride Semiconductors (ICNS-11) (Aug 31 - Sep. 4, 2015, Beijing, China)
  62. M. Sugiyama, (Invited) “Design and growth of strain-balanced superlattice for efficiency enhancement of multi-junction solar cells,” 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) (Aug. 2-7, 2015, Montana, USA)
  63. K. Toprasertpong, T. Tanibuchi, H. Sugiyama, T. Kada, S. Asahi, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano, “Comparison of Electron and Hole Mobilities in Multiple Quantum Well Solar Cells Using a Time-of-Flight Technique,” IEEE 42th Photovoltaic Specialist Conference, PVSC 2015 (June 14-19, 2015, New Orleans, USA) 297.
  64. H. Sodabanlu, H. Sugiyama, K. Watanabe, R. Onitsuka, Takaaki Agui, Hiroyuki Juso, Tatsuya Takamoto, David Lackner, Frank Dimroth, Andreas W. Bett, M. Sugiyama, Y. Nakano, “Lattice-matched 3-junction cell with 1.2-eV InGaAs/GaAsP superlattice middle cell for improved current matching,” IEEE 42th Photovoltaic Specialist Conference, PVSC 2015 (June 14-19, 2015, New Orleans, USA) 431.
  65. M. Sugiyama, A. Nakamura, K. Watanabe, Y. Ota, K. Nishioka, Y. Nakano, K. Fujii, “Concentrated Photovoltaic Electrochemical Cell (CPEC): A Route toward High-Efficiency, Cost-Effective Solar Hydrogen Production,” IEEE 42th Photovoltaic Specialist Conference, PVSC 2015 (June 14-19, 2015, New Orleans, USA) 782.
  66. M. Sugiyama, (Invited) “High-quality growth of strain-balanced superlattice with in situ monitoring and its impact on solar cell efficiency,” 16th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XVI) (June 7 ? 10, 2015, Lund, Sweden).
  67. G. Kono, M. Fujino, D. Yamashita, K. Watanabe, M. Sugiyama, Y. Nakano, T. Suga, “Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces,” 2015 International Conference on Electronic Packaging and iMAPS All-Asia Conference (ICEP-IAAC). Proceedings, p 478-81 (2015)
  68. A. Nakamura, K. Fujii, M. Sugiyama, Y. Nakano, “Dependence of AlN Growth Temperature on u-GaN/AlN/n-GaN Polarization Engineered Photocathode for Water Splitting”, Poster, Materials Research Symposium 2015 Spring Meeting, Poster, April 8, 2015, San Francisco, USA.
  69. M. Sugiyama, A. Nakamura, K. Watanabe, Y. Ota, K. Nishioka, Y. Nakano, K. Fujii, “Field demonstration and loss analysis of Concentrated Photovoltaic Electrochemical Cell (CPEC) toward 20% STH efficiency,” 2015 MRS Spring Meeting J1.07 (Apr. 6, 2015, San Fransisco)
  70. K. Fujii, A. Nakamura, K. Watanabe, M. Sugiyama, K. Nishioka, Y. Ota, Y. Nakano, “Nature Energy Origin Micro Grid System and Solar to Chemical Energy Storage by Solar Cell and Electrochemical Cell”, BIT’s 1st Annual World Congress of Smart Materials 2015 (WCSM-2015), Oral, March 24, 2015
  71. A. Delamarre, H. Sugiyama, K. Watanabe, L. Lombez, Y. Nakano, J.-F. Guillemoles, M. Sugiyama, "Investigation of carrier collection and open-circuit voltage of multi-quantum well solar cells by luminescence,” SPIE Photonic West; Symposium: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, v 9358, p 93580Y (Feb. 7-12, 2015, San Francisco).
  72. K. Fujii, A. Nakamura, K. Watanabe, M. Sugiyama, K. Nishioka, Y. Ota, Y. Nakano, “Suitable Properties of Solar Cells for Electrochemical Water Splitting to Store Hydrogen (Concentrated Photovoltaic Solar Cell as an Example)”, Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2015, Oral, January 13, 2015
  73. T. Kiba, Y. Tamura, C. Thomas, Y. Wang, H. Sodabanlu, J. Takayama, M. Sugiyama, Y. Nakano, Yoshiaki; I. Yamashita, A. Murayama, S. Samukawa, “Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching, IEEE International Semiconductor Laser Conference, p 133-134, December 16, (2014)
  74. Y. Tamura, A. Higo, T. Kiba, C. Thomas, Y. Wang, H. Sodabanlu, I. Yamashita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa, “Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes,” 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, p 221-224, November 26, 2014.
  75. B. Behaghel, P. Rale, Y. Shoji, R. Tamaki, N. Vandamme, L. Lombez, C. Dupuis, A. Cattoni, K. Watanabe, H. Sodabanlu, M. Sugiyama, Y. Okada, "Strong Absorption Exaltation in Ultrathin QDs and MQWs for Tandem and Intermediate Band Solar Cells," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 1WeO.2.2 (Nov. 24-27, 2014).
  76. K. Watanabe, T. Inoue, H. Sodabanlu, Y. Wang, M. Sugiyama and Y. Nakano, "Thin-film InGaAs/GaAsP MQWs Solar Cell with Dielectric Micro-Hole Array Structure for Light Trapping Effect", 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 1WeO.2.3 (Nov. 24-27, 2014).
  77. E. E. Tamayo R., K. Watanabe, T. Hoshii, R. Tamaki, M. Sugiyama, Y. Shoji, Y. Okada, and K. Miyano, "Maskless broadband antireflection technology on glass for flat and concentrator PV," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 1TuPo.1.20 (Nov. 24-27, 2014).
  78. Y. Wang, Hassanet. Sodabanlu, H. Sugiyama, K. Toprasertpong, K. Watanabe, M. Sugiyama and Y. Nakano, "InGaP-based multiple-quantum-well solar cell fabricated using metal-organic-vapor-phase epitaxy", 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 1WePo.1.18 (Nov. 24-27, 2014).
  79. D. Lackner, S. P. Philipps, F. Dimroth, H. Sodabanlu, K. Watanabe, N. Miyashita, M. Sugiyama, Y. Okada and A. W. Bett, "Monolithically Integrated Multi-Junction Cells built by Multiple Separate Growths in Different Epitaxy Reactors," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5TuO.10.4 (Nov. 24-27, 2014).
  80. T. Thomas, T. Wilson, Markus Fu?hrer, D. Alonso-Alvarez, N. J. Ekins-Daukes, David Lackner, Peter Kailuweit, S.P. Philipps, Andreas W. Bett, K. Toprasertpong, M. Sugiyama, Y. Nakano, “Potential for reaching 50% power conversion efficiency using quantum heterostructures,” 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5TuO.10.2 (Nov. 24-27, 2014).
  81. W. Yanwachirakul, K. Toprasertpong, H. Fujii, K. Watanabe, M. Sugiyama and Y. Nakano, "Open-circuit voltage behavior in multiple quantum well solar cells with different barrier thickness illuminated under high concentrated sunlight," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5WeO.3.3 (Nov. 24-27, 2014).
  82. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama and Y. Nakano, "Efficiency improvement of InGaAs/GaAsP multiple quantum well solar cells on mis-oriented GaAs substrates by pulse injection MOVPE," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5WeO.3.5 (Nov. 24-27, 2014).
  83. D. Alonso-Alvarez, M. Fuhrer, T. Thomas, N. P. Hylton, D. Lackner, S. P. Philipps, A. W. Bett, M. Sugiyama and N. J. Ekins-Daukes, "Photo-charging effects in high efficiency multiquantum wells and wires solar cells," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5WeO.3.6 (Nov. 24-27, 2014).
  84. T. Aihara, T. Murakami, H. Kuradome, T. Sugimoto, H. Suzuki, A. Fukuyama, T. Ikari, K. Toprasertpong, M. Sugiyama and Y. Nakano, "Demonstration of the Mini-band Investigation in Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells by Combination of a Piezoelectric Photothermal and Photoreflectance Spectroscopies," 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5TuPo.8.7 (Nov. 24-27, 2014).
  85. M. Fuhrer, D. Alonso-Alvarez, N. J. Ekins-Daukes, D. Farrell, H. Fujii, K. Toprasertpong and M. Sugiyama, “Calculation and Optimisation of the Absorption Coefficients of Highly Strained, Arbitrary Profile Quantum Wells to Enable 50% Efficient CPV Solar Cells,” 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan; 5TuPo.9.7 (Nov. 24-27, 2014).
  86. K. Yoshikawa, A. Higo, C. Y. Lee, Y. Tamura, C. Thomas, T. Kiba, S. Ishii, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Nakano, I. Yamashita, A. Murayama, S. Samukawa, “Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes,” 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, p 211-214, November 26, 2014.
  87. K. Toprasertpong, H. Sugiyama, T. Thomas, M. Fuhrer, D. Alonso-Alvarez, D. J. Farrell, K. Watanabe, Y. Okada, N. J. Ekins-Daukes, M. Sugiyama, Y. Nakano, “Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1AO.3.1.
  88. H. Sugiyama, K. Toprasertpong, H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “InGaAs/GaAsP superlattice solar cells on vicinal substrates for current-matched triple junction cells on Ge,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 4BO.10.1.
  89. Y. Wang, H. Sodabanlu, H. Fujii, K. Toprasertpong, K. Watanabe, M. Sugiyama & Y. Nakano, “Thermionic/tunneling Carrier Collection from MQWs: How Different Mechanisms Affect Solar Cell Performance under 1 Sun and Concentration,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1BV.7.54.
  90. B. Behaghel, N. Vandamme, C. Dupuis, N. Bardou, R. Tamaki, K. Watanabe, H. Sodabanlu, Y. Okada & M. Sugiyama, A. Cattoni, S. Collin, J.-F. Guillemoles, “Four-Fold MQWs Absorption Enhancement in a 430 Nm Thick InGaAs/GaAsP MQWs Solar Cell, 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1BV.7.55.
  91. T. Smyth, H. Xia, Y. Feng, M. Dvorak, M. Tayebjee, S. Shrestha, S. Bremner, S. Huang, G.J. Conibeer, S. Yagi, C. Fabien, B. Gunning, W.A. Doolittle, C. Tessarek & M. Latzel, T.W. Schmidt, M. Sugiyama, “Hot Carrier Relaxation and Phonon Dispersion in III-V Alloys,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1BV.7.57.
  92. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, ” Theoretical Study of Hot-Carrier Solar Cell with InGaAs/GaAsP Multiple Quantum Well Absorber,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1BV.7.59.
  93. P. Rale, L. Lombez, A. Delamarre, G. El Hajje, J.F. Guillemoles, R. Tamaki, Y. Shoji, Y. Okada, K. Watanabe, Y. Wang, M. Sugiyama, “Quantitative Optical Characterization of Intermediate Band Effect in Nanostructures,” 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands (Sep. 22-26, 2014) 1BV.7.65.
  94. J.-F. Guillemoles, A. Delamarre, G. El-Hajje, P. Rale, J. Rodire, D. Ory, M. Paire, D. Lincot, Daniel; K. Watanabe, M. Sugiyama, L. Lombez, “Hyperspectral imaging of photovoltaic conversion,” Materials Research Society Symposium Proceedings, v 1670, 2014.
  95. G. Kono, M. Fujino, D. Yamashita, K. Watanabe, M. Sugiyama, Y. Nakano, T. Suga, “Directly bonded Ge/GaAs by surface activated bonding for high efficiency III-V multi-junction solar cells,” Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, p 50, 2014, Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
  96. G. Kono, M. Fujino, D. Yamashita, K. Watanabe, M. Sugiyama, Y. Nakano, T. Suga, “Surface activated Ge/GaAs wafer bonding for multi-junction solar cells,” 2014 International Conference on Electronics Packaging (ICEP). Proceedings, p 720-3, 2014
  97. A. Delamarre, L. Lombez, P. Rale, G. El-Hajje, Daniel Ory, M. Paire, H. Sugiyama, W. Yanwachirakul, K. Watanabe, M. Sugiyama, Y. Nakano, P. Destruel, J.-F. Guillemoles, “Investigation of solar cells operation by luminescence: Current and voltage analysis on CIGS and multi-quantum well solar cells,” IUMRS-ICA 2014 (The International Union of Materials Reseach Societies - International Conference in Asia 2014); Symposium E-1 : Materials Frontier (Aug 24-30, 2014, Fukuoka, Japan).
  98. K. Koike, A. Nakamura, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, K. Fujii, “Effects of NiO Co-catalyst for Photocurrent and Surface Stability Improvement of n-type GaN Photoelectrode”, The 20th International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-20), Oral, July 8, 2014, Berlin, Germany
  99. T. Watanabe, Jon Oeyvind Kjellman, M. Sugiyama, Y. Nakano, “Impact of doping and mask pattern in selectively-grown InGaAs microdiscs on Si,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014) Mon-Oral-4-2
  100. N. Itoh, H. Sodabanlu, M. Sugiyama, Y. Nakano, “MOVPE-grown GaN/AlN resonant tunnelling diode: impact of interfacial non-abruptness,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014) Tue-Oral-1-4
  101. H. Sugiyama, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Ga precursor dependent growth of InGaAs/GaAsP strain-balanced quantum wells on 6? -off substrate,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014) Wed-Oral-2-2
  102. M. Mathew, M. Sugiyama, Y. Nakano, “Effect of AlN temperature on broadband visible ectroluminesence from InGaN/AlN nanodisks,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014) Thu-Oral-1-2
  103. T. Momose, T. Kamiya, Y. Suzuki, S. Ravasio, C. Cavallotti, M. Sugiyama, and Y. Shimogaki, “Kinetic analysis of GaN-MOVPE (1): thickness profiles in the flow direction under systematic variation of growth conditions,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014).
  104. S. Ravasio, T. Momose, M. Sugiyama, C. Cavallotti, “Kinetic analysis of GaN MOVPE (2): reaction mechanism development and fluid dynamic simulations,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, July 13-18, 2014).
  105. J.O. Kjellman, T. Tanemura, M. Sugiyama, Y. Nakano, “Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm,” 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM), p 3 pp., 2014
  106. M. Sugiyama, (Invited Talk) “Strain-balanced Quantum Wells as an Efficiency Booster for III-V Solar Cells,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  107. B. Behaghel, R. Tamaki, N. Vandamme, K. Watanabe, C. Dupuis, N. Bardou, H. Sodabanlu, A. Cattoni, Y. Okada, M. Sugiyama, S. Collin, J.-F. Guillemoles, “Four-fold MQWs Absorption Enhancement in a 430 nm Thick InGaAs/GaAsP MQWs Solar Cell,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  108. K. Toprasertpong, Naofumi Kasamatsu, H. Sugiyama, T. Kada, S. Asahi, Y. Wang, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano, “Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Quantum Structure Solar Cells,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  109. K. Watanabe, M. Seno, M. Sugiyama, Y. Nakano, “Development of the monolighically interconnected InGaP/GaAs dual junction solar cell with bypass diode for ultrahigh concentrator application,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  110. T. Inoue, K. Watanabe, M. Sugiyama, Y. Nakano, “Enhanced Light Trapping in Multiple Quantum Wells by Thin Film Structure and Backside Grooves with Dielectric Interface,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  111. W. Yanwachirakul, H. Sugiyama, K. Watanabe, M. Sugiyama, Y. Nakano, “Effect of Barrier Thickness on Carrier Transport inside Multiple Quantum Well Solar Cells under Highconcentration Light Illumination,” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (June 8-13, 2014, Denver, USA).
  112. D. J Farrell, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Okada, “Can a hot-carrier solar cell also be an efficient up-converter?” IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, (June 8-13, 2014, Denver, USA).
  113. T. Momose, Aiko Kondo, T. Kamiya, H. Yamada, J. Ohara, Y. Kitamura, H. Uchida, Y. Shimogaki, and M. Sugiyama, “Solubility measurement and correlation of Cu(tmhd)2 and Mn(pmcp)2 in mixture of scCO2 + H2 for supercritical fluid deposition,” 14th Euro Meeting on Supercritical Fluids (May 18-21, 2014, Marseille, France).
  114. J.-F. Guillemoles, A. Delamarre, G. El-Hajje, P Rale, D Ory, M. Paire, Daniel Lincot, K. Watanabe, M. Sugiyama, L. Lombez, “Characterization of Photovoltaic Absorbers for High Throughput Processing,” MRS spring meeting (April 21-25, 2014, San Francisco).
  115. K. Koike, A. Nakamura, F. Sano, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, K. Fujii, “Surface Stabilities of NiO-Loaded n-Type GaN Dependent on Electrolyte Under Photoelectrochemical Reactions”, Materials Research Symposium 2014 Spring Meeting, Poster, April 24, 2014, San Francisco, USA
  116. (Invited Talk) M. Sugiyama, H. Fujii, K. Toprasertpong, Y. Wang, H. Sodabanlu, K. Watanabe and Y. Nakano, “Nanoepitaxial Structures for the Efficiency Enhancement of Multijunction Solar Cells,” Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (Phoenix, Arizona, March 10-14, 2014)
  117. (Invited Talk) M. Sugiyama, “Way to high efficiency (>50%) photovoltaic devices using III-V nanoepitaxial structures,” THERMEC 2013, L6-1 (Dec. 2-6, 2013, Las Vegas, USA).
  118. K. Koike, A. Nakamura, M. Sugiyama, Y. Nakano, K. Fujii, “Surface stabilities of n-type GaN dependent on electrolyte under photoelectrochemical reactions,” Materials Research Society Symposium Proceedings, v 1647, 2014, Surface/Interface Characterization and Renewable Energy
  119. Y. Taki, Z. Tan, S. Ohara, T. Itoh, Y. Nakano, K. Fujii, M. Sugiyama, ” Synthesis of CaMn2O4-related electrocatalyst for oxygen evolution electrode of water-splitting,” MRS fall meeting (December 1-6, 2013, Boston) Proceeding 1640 (DOI:10.1557/opl.2014.406).
  120. A. Nakamura, K. Fujii, M. Sugiyama, and Y. Nakano, “Optimization of the AlN Thickness for the Polarization Engineered Photocathode Consisting of Only N-Type Nitrides for Water Splitting”, Materials Research Symposium 2013 Fall Meeting, Oral, December, 2013, Boston, USA.
  121. K. Toprasertpong, H. Sugiyama, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Thermionic Behavior of Carrier Transport in InGaAs/GaAsP Multiple Quantum Well Solar Cells”, PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-8.
  122. K. Watanabe, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Nakano, “Light-biased Quantum Efficiency Analysis of the InGaAs/GaAsP Multiple Quantum Wells Solar Cells,” PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-9.
  123. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Efficiency of InGaAs/GaAsP Multiple Quantum Well Solar Cells on Various Mis-oriented GaAs Substrates under Concentrated Light,” PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-12.
  124. H. Sugiyama, H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “In-situ Reflectance Monitoring in MOVPE Growth of InGaAs/GaAsP uperlattice on Misoriented GaAs Substrate,” PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-14.
  125. Y. Wang, H. Sodabanlu, H. Sugiyama, K. Toprasertpong, K. Watanabe, M. Sugiyama, Y. Nakano, “Investigation on the Role of Inserted Ultrathin GaAs Layer in a Strain Balanced Superlattice Solar Cell,” PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-15.
  126. M. Seno, K. Watanabe, M. Sugiyama, Y. Nakano, “Fabrication of Monolithic Integrated Series-Connected InGaP/GaAs Dualjunction Solar cells,” PVSEC-23 (Oct. 28 - Nov. 1, 2013, Taipei, Taiwan), 4-O-16.
  127. H. Fujii, K. Toprasertpong, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “100-Period, 1.23 eV Bandgap InGaAs / GaAsP Quantum Wells for Efficiency-Enhanced GaAs Solar Cells: Toward Current-Matched Ge-Based Tandem Cells,” Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition (Sep. 30 ? Oct. 4, 2013, Paris), pp. 129 - 134.
  128. T. Inoue, B. Kim, K. Watanabe, M. Sugiyama, Y. Nakano, “Fabrication of thin-film InGaAs/GaAsP multiple quantum well solar cells with light-trapping structure,” Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition (Sep. 30 ? Oct. 4, 2013, Paris), pp. 595 ? 598.
  129. Y. Wang, H. Sodabanlu, K. Watanabe, S. Ma, M. Sugiyama, Y. Nakano, “A Novel Design in Strain-Balanced Super-Lattice Solar Cell towards an Efficient Carrier Transport and Breaking the Strain-Balance Bottleneck of Deep Well Structure,” Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition (Sep. 30 ? Oct. 4, 2013, Paris), pp. 28-30.
  130. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Efficiency of InGaAs/GaAsP Multiple Quantum Well Solar Cell on Various Misoriented GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy,” Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition (Sep. 30 ? Oct. 4, 2013, Paris), pp. 246-248.
  131. N. Hylton, X. Li, V. Giannini, K.-H. Lee, N.J. Ekins-Daukes, J. Loo, D. Vercruysse, P. Van Dorpe, H. Sodabanlu, M. Sugiyama, S.A. Maier, “Broadband Absorption Enhancements Using Scattering Al Nanoparticle Arrays,” Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition (Sep. 30 ? Oct. 4, 2013, Paris), pp. 11-13.
  132. T. Ikari, A. Fukuyama, T. Aihara, Y. Yokoyama, M. Kojima, M. Sugiyama, Y. Nakano, “Non-radiative carrier recombination rate in multiple quantum well solar cells determined by using a photothermal and a surface photovoltage spectroscopies,” 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013), Paris, France; 1AV.2.23, Sep., 2013.
  133. Y. Tamura, A. Higo, T. Kiba, Y. Wang, C. Thomas, T. Okada, W. Hu, A. Murayama, M. Sugiyama, Y. Nakano, S. Samukawa, “High density and high aspect ratio GaAs/AlGaAs nanopillar array fabricated by fusion of bio-template and neutral beam etching,” International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan; 09/2013.
  134. T. Momose, Aiko Kondo, H. Yamada, J. Ohara, Y. Kitamura, H. Uchida, Y. Shimogaki, and M. Sugiyama, “Solubility measurement of Cu(tmhd)2 and Mn(pmcp)2 in supercritical CO2/H2 mixture for supercritical fluid deposition,” 9th World Congress of Chemical Engineering (WCCE9) (Aug. 18-23, 2013, Seoul, Korea).
  135. A. Nakamura, M. Sugiyama, K. Fujii, Y. Nakano, “Capacitance measurements for AlGaN/GaN photoelectrochemical electrode by using electrolyte contact and by metal contact,” AIP Conference Proceedings, v 1568, p 28-30, 2013.
  136. Y. Tamura, A. Higo, Takayuki Kiba, Y. Wang, C. Thomas, T. Okada, Weiguo Hu, A. Murayama, M. Sugiyama, Y. Nakano, S. Samukawa, “High density and high aspect ratio GaAs/AlGaAs nanopillar array fabricated by fusion of bio-template and neutral beam etching,” International Conference on Solid State Devices and Materials (SSDM), At Fukuoka, Japan, Volume: K-2-5, pp. 998-999, Sep. 2013.
  137. M. Seno, K. Watanabe, M. Sugiyama and Y. Nakano, “I-V Characteristics of Monolithic Integrated Series-Connected GaAs Solar Cells under concentration,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 16p-M2-3.
  138. T. Inoue, Boram Kim, K. Watanabe, M. Sugiyama and Y. Nakano, “Fabrication of Thin-film InGaAs/GaAsP Multiple Quantum Well Solar Cells with Backside Periodic Grooves for Light-Trapping,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 17a-M2-3.
  139. K. Watanabe, H. Sodabanlu, Y. Wang, M. Sugiyama and Y. Nakano, “Enhanced power conversion efficiency in InGaAs/GaAsP multiple quantum well solar cells,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18a-M2-3.
  140. M. Sugiyama, K. Watanabe, Y. Wang, H. Sodabanlu, H. Sugiyama and Y. Nakano, ” Can quantum wells provide efficiency gain for a single-junction cell?”, 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18a-M2-4.
  141. H. Sugiyama, K. Toprasertpong, K. Watanabe, M. Sugiyama and Y. Nakano, “Structure optimization of 1.23 eV bandgap InGaAs/GaAsP quantum wells in GaAs single junction solar cells for absolute efficiency enhancement,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18a-M2-6.
  142. K. Toprasertpong, H. Sugiyama, Y. Wang, K. Watanabe, M. Sugiyama and Y. Nakano, “Carrier Collection Enhancement by Barrier Design in InGaAs/GaAsP Strain-Balanced Quantum Well Solar Cells,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18a-M2-7.
  143. Y.P Wang, H Fujii, H Sodabanlu, K Watanabe, M Sugiyama and Y Nakano, “Investigation on the role of inserted ultra-thin GaAs layer in a strain balanced superlattice solar cell,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18a-M2-8.
  144. T. Watanabe, K. Watanabe, M. Sugiyama and Y. Nakano, “Measurement of the Acceptance Angle of the Concentrator Photovoltaic (CPV) Module,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 16p-PM2-1
  145. H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama and Y. Nakano, “Absorption coefficient of InGaAs/GaAsP multiple quantum wells on mis-oriented GaAs for photovoltaic application,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 16p-PM2-9
  146. M. Mathew, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Monolithic cool white light emitting diodes based on InGaN/AlN nanodisks,” 2013 JSAP-MRS Joint Symposia (Sep 16-18, 2013, 2013, Kyoto, Japan), 18p-M6-11.
  147. N. Itoh, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Simulation of intersubband transition in GaN-AlN multiple quantum wells”, 12th International Conference on Intersubband transition in quantum wells (ITQW 2013), At Bolton Landing, NY, Volume: XV-7, pp. 1-2
  148. Y. Tamura, A. Higo, T. Kiba, Y. Wang, M. Igarashi, C. Thomas, Weiguo Hu, M. E. Fauzi, A. Murayama, M. Sugiyama, Y. Nakano, S. Samukawa,” Photoluminescence of high-density and sub-20-nm GaAs nanodisks fabricated with a neutral beam etching process and MOVPE regrowth for high performance QDs devices,” 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO); 08/2013.
  149. K. Watanabe, Y. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell,” 17th International Conference on Crystal Growth and Epitaxy (’ICCGE-17), At Warsaw, Poland, Volume: FrO2.5, pp. 388-392, Aug. 2013.
  150. A. Nakamura, K. Fujii, M. Sugiyama and Y. Nakano, “Novel Nitride Photoelectrode Based on Polarization Engineering for Water Splitting,” 10th International Conference on Nitride Semiconductors (Aug. 25-30, Washington DC, 2013) D4.10.
  151. Cai Liu, Hongbo Wang, M. Sugiyama, Y. Nakano, “In-situ Growth Condition Analysis of AIN Interlayers for Wafer Curvature Control in GaN MOVPE on Si (111),” 10th International Conference on Nitride Semiconductors (Aug. 25-30, Washington DC, 2013) AP3.65.
  152. Hongbo Wang, H. Sodabanlu, M. Sugiyama and Y. Nakano, “HT GaN Growth on Patterned AIN Nucleation Layer Using ICP O2 Plasma Treatment,” 10th International Conference on Nitride Semiconductors (Aug. 25-30, Washington DC, 2013) AP3.72.
  153. M. Mathcw, H. Sodabanlul, M. Sugiyama and Y. Nakano, “Monolithic Cool White Light Emitting Diodes Based on AlN Islands,” 10th International Conference on Nitride Semiconductors (Aug. 25-30, Washington DC, 2013) B5.03.
  154. K. Koike, A. Nakamural, Masakahu Sugiyama, Y. Nakano and K. Fujii, “Surface Stability of N-TypeGan Dependent on Carrier Concentration and Electrolytes under Photoelectrochemical Reactions,” 10th International Conference on Nitride Semiconductors (Aug. 25-30, Washington DC, 2013) CP2.17.
  155. K. Watanabe, Y. Wang, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Analysis for current-voltage characteristics of the InGaAs/GaAsP super-lattice solar cells under optical concentration,” AIP Conference Proceedings, v 1556, p 62-6, 2013.
  156. M. Seno, K. Watanabe, M. Sugiyama, Y. Nakano, “Performance of monolithic integrated series-connected GaAs solar cells under concentrated light,” AIP Conference Proceedings, v 1556, p 26-9, 2013.
  157. Y. Shimogaki, M. Sugiyama, Y. Nakano, “Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), p 51-2, 2013.
  158. N. P. Hylton, X. Li, V. Giannini, Kan-Hua Lee, N. J. Ekins-Daukes, J. Loo, D. Vercruysse, P. V. Dorpe, H. Sodabanlu, M. Sugiyama, S. A. Maier, “Al Nanoparticle Arrays for Broadband Absorption Enhancements in GaAs Photodiodes,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 14.
  159. T. Aihara, Y. Yokoyama, M. Kojima, H. Suzuki, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano, T. Ikari, “Estimation of Mini-band in Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells by Using a Piezoelectric Photothermal Method,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 86.
  160. H. Sugiyama, K. Toprasertpong, K. Watanabe, M. Sugiyama, Y. Nakano, “High-aspect-ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs / GaAsP Multiple Quantum Well Solar Cells,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 91.
  161. H. Sodabanlu, Y. Wang, Shaojun Ma, K. Watanabe, M. Sugiyama, Y. Nakano, “Metalorganic Vapor Phase Epitaxy Growth of Dual Junction Solar Cell with InGaAs/GaAsP Superlattice on Ge,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 103.
  162. Y. Wang, K. Watanabe, H. Sodabanlu, ShaoJun Ma, H. Sugiyama, K. Toprasertpong, M. Sugiyama, Y. Nakano, “A superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 109.
  163. E. E. Tamayo R, K. Watanabe, M. Sugiyama, T. Hoshii, Y. Shoji, Y. Okada, K. Miyano, “Fabrication of broadband antireflection structures on glass substrates by Reactive Ion Etching for application on homogenizers in CPV systems,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 147.
  164. K. Toprasertpong, H. Sugiyama, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 481.
  165. ShaoJun Ma, Y. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano, “Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 483.
  166. K. Watanabe, Boram Kim, T. Inoue, H. Sodabanlu, M. Goto, S. Hayashi, M. Sugiyama, K. Miyano, Y. Nakano, “Thin film InGaAs/GaAsP MQWs solar cell with backside nano-imprinted pattern for light trapping,” 39th IEEE Photovoltaic Specialists Conference (PVSC39) (June 16-21, 2013, Tampa, USA) 485.
  167. M. Sugiyama, H. Fujii, K. Toprasertpong, Y. Wang, H. Sodabanlu, K. Watanabe, Y. Nakano, (Invited Talk) “Strain-balanced quantum-well superlattice for higher efficiency of III-V solar cells,” E-MRS spring meeting (May 27-31, 2013 Strasbourg, France) D.XVI.1
  168. Cai Liu, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Void Formation during GaN MOVPE on Si (111) Employing Low Temperature AlN Interlayers,” E-MRS spring meeting (May 27-31, 2013 Strasbourg, France) L 13-4.
  169. M. Mathew, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Long wavelength InGaN/AlN nanodisk light emitting diode,” E-MRS spring meeting (May 27-31, 2013 Strasbourg, France) L P226.
  170. Y. Yokoyama, M. Kojima, T. Aihara, H. Suzuki, A. Fukuyama, H. Fujii, M. Sugiyama, Y. Nakano, T. Ikari, “Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells,” E-MRS spring meeting (May 27-31, 2013 Strasbourg, France) J.XIII.5
  171. T. Aihara, M. Kojima, Y. Yokoyama, H. Suzuki, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano, T. Ikari, E-MRS spring meeting (May 27-31, 2013 Strasbourg, France) J. XV.6
  172. A. Higo, L. Li, E. Higurashi, M. Sugiyama, Y. Nakano, “InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding,” Proceedings of the SPIE - The International Society for Optical Engineering, v 8616, p 86160X (6 pp.), 2013.
  173. T. Mino, H. Hirayama, T. Takano, K. Tsubaki, M. Sugiyama, “Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates,” Proceedings of the SPIE - The International Society for Optical Engineering, 2013, DOI: 10.1117/12.2002322.
  174. Y. Shimogaki, M. Sugiyama, Y. Nakano, “Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs,” Proc. 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013, p 51-2, (2013)
  175. K, Fujii, S. Nakamura, K. Watanabe, B. Bagheri, M. Sugiyama, Y, Nakano, “Over 12% Light to Hydrogen Energy Conversion Efficiency of Hydrogen Generation from Water: New System Concept, Concentrated Photovoltaic Electrochemical Cell (CPEC)”, Mater. Res. Soc. Symp. Proc. 1491 (2013) DOI: 10.1557/opl.2012.1739.
  176. M. Sugiyama, K. Watanabe, Y. Wang, H. Sodabanlu, Hiromassa Fujii, Boram Kim, K. Miyano and Y. Nakano: (Invited Talk) “Efficiency gain of quantum-well solar cells by light-trapping structure and sunlight concentration,” in Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, SPIE Photonic West 2013 (Feb. 2-7, 2013, San Francisco, USA) 8620-48.
  177. H. Fujii, K. Toprasertpong, K. Watanabe, M. Sugiyama, Y. Nakano, “Carrier collection efficiency in multiple quantum well solar cells,” Proceedings of SPIE - The International Society for Optical Engineering, v 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II (Feb. 2-7, 2013, San Francisco, USA)
  178. M. Kubota, K. Hosaka, M. Sugiyama, Y. Mita, “Evaluation of silicon fracture strength dependence on stealth dicing layers for “cleave-before-use” MEMS freestanding cantilever probes,” Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII, DOI: 10.1109/Transducers.2013.6626724 (2013)
  179. Y.F. Li, Y. Tomizawa, A. Koga, M. Sugiyama, H. Fujita, “Multiple antiwear probes for stable and high throughput scanning probe microscope nanolithography,” Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII, DOI: 10.1109/Transducers.2013.6627189 (2013).
  180. T. Chikamoto, Y. Shimada, M. Umetsu, M. Sugiyama: “Integration of single-walled carbon nanotube bundle on cantilever by dielectrophoresis,” 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), p 319-22 (2013)
  181. H. Wakioka, S. Yamamoto, K.V. Tabata, M. Sugiyama: “Attoliter order droplet formation using nanochannels and enzyme reaction inside a droplet,” Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), p 1161-1164, 2013, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013.
  182. M. Abasaki, S. Souma, N. Moronuki, M. Sugiyama: “Nano-fractal gas sensr integrated on micro hteater fabricated with suspension coating,” 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), p 993-6, 2013.
  183. M. Sugiyama, H. Fujii, Y. Wen, Y. Wang, H. Sodabanlu, K. Watanabe, Y. Nakano: (Invited Talk) “InGaAs/GaAsP quantum-well superlattice solar cell for better carrier collection and higher efficiency,” 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD 2012). Proceedings, p 125-6, 2012.
  184. A. Higo, L. H. Li, E. Higurashi, M. Sugiyama, Y. Nakano: “InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding,” 10th International Conference on Optical Internet, COIN 2012, p 24-25, 2012.
  185. Y. Fujimoto, A. Higo, J. O. Kjellman, S. Watanabe, M. Sugiyama, Y. Nakano, "Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE,” International Conference on Optical MEMS and Nanophotonics, p 200-201, 2012, 2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
  186. Y. P. Wang, S. J. Ma, H. Sodabanlu, H. Fujii, K. Watanabe, M. Sugiyama, Y. Nakano, “Smart interface management to implement a high quality strain balanced super-lattice solar cell,” The 22nd International Photovoltaic Science and Engineering Conference (Nov. 05 ? 09, 2012, Hangzhou, China) 4-O-4.
  187. B. Kim, K. Watanabe, M. Sugiyama, Y. Nakano , “Drastic QE enhancement by light-trapping structure in InGaAs/GaAsP Multiple Quantum-Well solar cells,” The 22nd International Photovoltaic Science and Engineering Conference (Nov. 05 ? 09, 2012, Hangzhou, China) 3-O-27.
  188. K. Waatanabe, K. Toprasertpong, H. Fujii, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Temperature-dependent photoluminescence analysis for InGaAs/GaAsP multiple quantum wells solar cell,” The 22nd International Photovoltaic Science and Engineering Conference (Nov. 05 ? 09, 2012, Hangzhou, China) 4-O-30.
  189. S. J. Ma, Y. P. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano, “InGaAs/GaAsP MQWs solar cell with tunneling assisted structure for enhancing carrier transportation,” The 22nd International Photovoltaic Science and Engineering Conference (Nov. 05 ? 09, 2012, Hangzhou, China) 4-O-32.
  190. H. Sodabanlu, S. J. Ma, Y. P. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Chirped distributed bragg reflector for enhancing light absorption in InGaAs/GaAs multiple-quantum-well single-junction solar cells,” The 22nd International Photovoltaic Science and Engineering Conference (Nov. 05 ? 09, 2012, Hangzhou, China) 4-P-29.
  191. M. Sugiyama, (Invited Talk) “Selective-Area Epitaxial Lateral Overgrowth of InGaAs Microdiscs on Si,” 222nd Meeting of Electrochemical Society, E17-3134 (Oct. 7-12, 2012, Hololulu, USA).
  192. A. Nakamura, M. Sugiyama, Y. Nakano, and K. Fujii, “Comparison between semiconductor-electrolyte and semiconductor-metal Schottky junctions using AlGaN/GaN photoelectrochemical electrode”, International Workshop on Nitride Semiconductors 2012, poster, October, 2012, Sapporo, Japan
  193. K. Anazawa, H. Sodabanlu, K. Fujii, Y. Nakano and M. Sugiyama, “Impact of accumulated stress on the quality of InGaN/AlN MQWs on GaN grown by MOVPE,” International Workshop on Nitride Semiconductors 2012 (IWN 2012) (Oct. 14-19, Sapporo, Japan) TuP-GR-34.
  194. H. Wang, H. Sodabanlu, Y. Daigo, T. Nakagawa and M. Sugiyama, “Underlayer dependence of luminescence property for InGaN grown by MOVPE,” International Workshop on Nitride Semiconductors 2012 (IWN 2012) (Oct. 14-19, Sapporo, Japan) TuP-GR-30
  195. T. Momose, Aiko Kondo, H. Yamada, J. Ohara, Y. Kitamura, H. Uchida, Y. Shimogaki, and M. Sugiyama, “Effect of H2 addition into scCO2 on Cu(tmhd)2 solubility,” 6th International Symposium on Molecular Thermodynamics and Molecular Simulation (MTMS2012) (Sept. 25-28, 2012, Hiroshima, Japan).
  196. H. Yamada, J. Ohara, T. Momose, Hohisa Uchida, Y. Shimogaki, and M. Sugiyama, “Reactor Design for Novel Deposition Technique Using Supercritical Fluid,” International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM) 2012 (Sept. 23-28, 2012, Yokohama, Japan).
  197. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Enhanced Carrier Collection Efficiency in InGaAs/GaAsP Quantum Well Solar Cells by Compensation Doping,” Conference proceeding of 27th European Photovoltaic Solar Energy Conference and Exhibition (27 EU-PVSEC) (Sep. 24-28, 2012, Frankfurt) 1AO.7.2. (p. 27).
  198. Y. Wang, K. Watanabe, H. Fujii, H. Sodabanlu, M. Sugiyama, Y. Nakano, “Observation of a Strong Open-Circuit Voltage Enhancement in a Super-Lattice Solar Cell under Concentration: A Potential Scenario for a High Efficiency Single Junction Cell,” Conference proceeding of 27th European Photovoltaic Solar Energy Conference and Exhibition (27 EU-PVSEC) (Sep. 24-28, 2012, Frankfurt) 1AO.7.6. (p. 41).
  199. M. Seno, K. Watanabe, M. Sugiyama, Y. Nakano, “Monolithic Integrated Series-Connected GaAs Solar Cells with Bypass Diodes for Reduced Joule Energy Loss under Concentration,” Conference proceeding of 27th European Photovoltaic Solar Energy Conference and Exhibition (27 EU-PVSEC) (Sep. 24-28, 2012, Frankfurt) 1AV.3.5. (p. 178).
  200. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama, Y. Nakano, “Correlation between Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells and Average Strain Evaluated by Wafer Curvature and X-Ray Reciprocal Space Mapping,” Conference proceeding of 27th European Photovoltaic Solar Energy Conference and Exhibition (27 EU-PVSEC) (Sep. 24-28, 2012, Frankfurt) 1BV.7.26. (pp. 325-327).
  201. A. Nakamura, M. Sugiyama, Y. Nakano, and K. Fujii, “Comparison between semiconductor-electrolyte and semiconductor-metal Schottky junctions using AlGaN/GaN photoelectrochemical electrode”, International Workshop on Solar-Chemical Energy Storage 2012, Poster, July, 2012, Sendai, Japan.
  202. S. Watanabe, K. Watanabe, A. Higo, M. Sugiyama, Y. Nakano: “Electrical conduction property at InAs/Si(111) interface by selective-area MOVPE,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials (IPRM), p 133-136, 2012.
  203. M. Yokoyama, N. Taoka, R. Suzuki, O. Ichikawa, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: “Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties,” 24th International Conference on Indium Phosphide & Related Materials (IPRM 2012), p 167-70, 2012
  204. M. Sugiyama, H. Fujii, Y. Wen, Y. Wang, H. Sodabanlu, K. Watanabe, Y. Nakano, (Invited Talk) “Enhancement of Carrier Collection for High-Efficiency Quantum-Well Solar Cells,” XXI International Materials Research Congress, 6C-6 (Aug 12-17, 2012, Cancun, Mexico)
  205. M. Sugiyama, Y. Wang, H. Fujii, H. Sodabanlu, K. Watanabe, Y. Nakano, (Plenary Talk) “Efficiency improvement of III-V solar cells using quantum-well superlattice,” International Conference of Young Researchers on Advanced Materials (ICYRAM 2012), EM1-M-09 (July 1-6, 2012, Singapole).
  206. M. Sugiyama, (Invited Talk) “Combined Top-down and Bottom-up Approach for Next-generation 3D MEMS,” 4th International Conference on Smart Materials Structures Systems, E-4:IL02 (June 10-14, 2012, Montecatini Terme, Italy).
  207. Kazehiko Anazawa, Sodabanlu Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of Strain-Compensated InGaN/AlN MQWs on GaN by MOVPE,” 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16) (May 20-25, 2012, Busan, Korea), MoA3-5.
  208. H. Sugiyama, K. Watanabe, M. Sugiyama, and Y. Nakano, ”Doping-Compensation for Efficient Carrier Transport in InGaAs / GaAsP Multiple Quantum Well Solar Cells,” 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16) (May 20-25, 2012, Busan, Korea), WeA3-3.
  209. H. Sodabanlu, Shaojun Ma, K. Watanabe, M. Sugiyama, and Y. Nakano, “Correlation Between in SITU Wafer's Curvature and the Performance of InGaAs/GaAsP Multiple Quantum Wells Solar Cells,” 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16) (May 20-25, 2012, Busan, Korea), TuP-101.
  210. K. Watanabe, H. Sodabanlu, Shaojun Ma, M. Sugiyama, and Y. Nakano, “In-Situ Curvature Monitoring of the MOVPE Grown InGaAs/GaAs Compressive Strained Multiple Quantum Wells Solar Cells,” 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16) (May 20-25, 2012, Busan, Korea), TuP-105.
  211. T. Momose, Aiko Kondo, H. Yamada, J. Ohara, Y. Kitamura, H. Uchida, Y. Shimogaki, and M. Sugiyama, “Novel Supercritical Fluid Deposition Technique of SiO2 using Flow Channel Reactor”, 10th International Symposium on Supercritical Fluids (May 13-16, 2012 San Francisco, USA).
  212. M. Sugiyama, (Keynote Talk) “Recent Advances and Future Prospects of III-V Multijunction Solar Cells,” International Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors (May 10-11, 2012, Makuhari, Japan)
  213. K. Watanabe, B. Kim, H. Sodabanlu, M. Goto, K. Nakayama, S. Hayashi, M. Sugiyama, K. Miyano, Y. Nakano, “Light-Trapping Structure with Backside Scatterer for Enhanced Photo-Absorption by Quantum Structures,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 41
  214. Yu Wen, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum Well Solar Cell,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 409.
  215. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, (Invited Oral) “High-Aspect-Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum Well Solar Cells, 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 406.
  216. ShaoJun Ma, H. Sodabanlu, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano, “InGaAs/GaAsP Asymmetric Quantum Wells for Enhancing Carrier Escape Through Resonant Tunneling,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 001908 - 001910.
  217. Y. Wang, ShaoJun Ma, H. Sodabanlu, H. Sugiyama, K. Watanabe, M. Sugiyama, Y. Nakano, “A Multi-Step Superlattice Solar Cell with Enhanced Sub-Band Absorption and Open Circuit Voltage,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 001940 - 001943.
  218. H. Sodabanlu, Shaojun Ma, K. Watanabe, M. Sugiyama, Y. Nakano, “Carrier Sweep-Out Time in InGaAs/GaAsP Multiple Quantum Well Solar Cells by Time-Resolved Photoluminescence: Effects of Well Depth and Barrier Thickness,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 001922 - 001925.
  219. E.E.M.-K. Tamayo, K. Watanabe, R. Watanabe, M. Sugiyama, Y. Okada, K. Miyano, “Efficiency simulations of top surface light management structures for concentrator solar cells using RCWA and detailed balance theory,” 38th IEEE Photovoltaic Specialists Conference(PVSC38) (June 3-8, 2012, Seattle, USA) 002101 - 002104.
  220. L. Li, A. Higo, E. Higurashi, M. Sugiyama, Y. Nakano, “SOI platform and III-V integrated active photonic device by direct bonding for data communication,” Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, p 87, 2012, Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
  221. M. Sugiyama, “(Invited talk) Quantum-Well Solar Cells for Higher Efficiency of Multiple-Junction Solar Cells,” Specialist Workshop at Seoul National University "Materials for Solar Energy Utilization Technologies (June 15, Seoul National University, 2012)
  222. A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii, M. Sugiyama, Y. Nakano, T. Ikari, “Non-radiative carrier recombination mechanism in the InGaAs/GaAsP strain-balanced quantum well solar cells with different number of stacks by using a piezoelectric photothermal method,” AIP Conference Proceedings, v 1477, p 185-8, 2012.
  223. K. Watanabe, Y. Wang; H. Sodabanlu, S. Ma; B. Kim; M. Sugiyama, Y. Nakano, “Open-circuit-voltage enhancement of the III-V super-lattice solar cells under optical concentration,” AIP Conference Proceedings, v 1477, p 40-3, 2012.
  224. M. Sugiyama, Y. Wang, H. Sodabanlu, S. Ma, H. Fujii, K. Watanabe, Y. Nakano, “Defect Management in III-V Nanostructure Solar Cells for Higher Efficiency by Strain Control Based on In Situ Monitoring of MOVPE,” 2012 MRS Spring Meeting (Apr 9-13, 2012, San Fransinco, USA) G11.1
  225. T. Momose, Aiko Kondo, Y. Shimogaki, and M. Sugiyama, ““Ultra conformal metal deposition in extremely high aspect ratio features of MEMS devices by supercritical fluid deposition”, MRS Spring Meeting (Apr. 9-13, 2012 San Francisco, CA).
  226. M. Kubota, Y. Mita, T. Momose, A. Kondo, Y. Shimogaki, Y. Nakano, M. Sugiyama: “A 50 nm-wide 5 um-deep copper vertical gap formation method by a gap-narrowing post-process with supercritical fluid deposition for Pirani gauge operating over atmospheric pressure,” Proc. 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), p 204-7, 2012
  227. M. Sugiyama, Y. Wang, Yu Wen, K. Watanabe, Y. Nakano: “Exploring the potential of quantum wells for efficiency enhancement in photovoltaic cells,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, SPIE Photonic West (Jan. 21-26, 2012, San Francisco, USA) 8256-11.
  228. Y. Nishimori, S. Ueki, K. Miwa, T. Kubota, S. Samukawa, G. Hashiguchi, M. Sugiyama, “Recovery of plasma-induced mechanical damage in resonators using Neutral Beam Etching: Wafer-scale validation by arrayed cantilevers,” 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), p 313-16, 2012.
  229. L. C. Hirst, M. Furher, D. J. Farrell, A. Le Bris, J.-F. Guillemoles, M. J. Y. Tayebjee, R. Clady, T. W. Schmidt, M. Sugiyama, Y. Wang, N. J. Ekins-Daukes: “InGaAs/GaAsP quantum wells for hot carrier solar cells,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, SPIE Photonic West (Jan. 21-26, 2012, San Francisco, USA) 8256-31.
  230. ShaoJun Ma, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano: “Gas Sequence Effect on In Situ Wafer Curvature Behavior in Ingaas/Gaasp Strain-Balanced MQWs”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 2D-4P-10.
  231. H. Fujii, Y. Wang, K. Watanabe, M. Sugiyama and Y. Nakano: “Effects of Increasing Well Number on Carrier Transport In Eg = 1.2ev InGaAs / GaAsP Multiple Quantum Well Solar Cells,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 2B-4O-06.
  232. H. Fujii, Y. Wang, M. Sugiyama and Y. Nakano: A Large Number Stack of Eg=1.2ev InGaAs / GaAsP Multiple Quantum Wells with Graded Buffer Layers for Enhanced Infrared Response,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 2D-4P-13.
  233. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama and Y. Nakano: “Effects of Background Zn Doping on the Performance of MOVPE-Grown InGaAs / GaAsP Multiple Quantum Wells Solar Cells,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 4D-4P-05.
  234. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama and Y. Nakano: “Impact of Strain Accumulation on InGaAs / GaAsP Multiple Quantum Wells Solar Cells: Direct Correlation Between In Situ Strain Measurement and Cell Performances,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 4D-4P-06.
  235. Y. Wang, K. Watanabe, H. Fujii, S. Ma, M. Sugiyama and Y. Nakano: “Carrier Transport through Super-Lattice Region in A Multiple Quantum Well Solar Cell,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 4D-4P-07.
  236. Y. Wen, Y. Wang, K. Watanabe, M. Sugiyama and Y. Nakano: “Deep Multiple Stepped Quantum Well (MSQW) Solar Cell,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 4D-4P-09.
  237. K. Watanabe, Y. Yamada, M. Senou, M. Sugiyama and Y. Nakano: “Fabrication of Monolithic Integrated Series-Connected GaAs PV Cells for Concentrator Application,” Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21) (Nov. 28-Dec. 2, 2011, Fukuoka, Japan) 4D-4P-21.
  238. M. Yokoyama, R. Suzuki, N. Taoka, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi: “Surface cleaning effect on III-V oxide for InGaAs(100), (111)A, and (111)B surfaces and their Al2O3 MOS interfaces by using (NH4)2S solution”, 42nd IEEE Semiconductor Interface Specialist Conference (SISC 2011), P.22, pp. 1-2, Arlington, Virginia, December 1 (2011)
  239. Y. Nishimori, S. Ueki, T. Kubota, M. Sugiyama, G. Hashiguchi: “Quantitative Research on Low-Damage Neutral Beam Etching Effect of Mechanical Properties,” AVS 58th International Symposium (Oct 30-Nov. 4, 2011, Nachville, USA).
  240. Y.F. Li, Y. Tomizawa, A. Koga, G. Hashiguchi, M. Sugiyama, H. Fujita: “A trench-type anti-wear microprobe with nano-scale electric contacts for AFM LAO lithography,” International Workshop on Micro/Nano-Engineering (Dec 17-18, 2011, Kyoto, Japan)
  241. M. Abasaki, S. Souma, M. Takeda, N. Moronuki, M. Sugiyama: “Large-Surface-Area 3D Self-Assembled Nano-Porous Structure for High Concentration Gas Sensing,” International Workshop on Micro/Nano-Engineering (Dec 17-18, 2011, Kyoto, Japan)
  242. Y. Nishimori, S. Ueki, T. Kubota, M. Sugiyama, G. Hashiguchi: “Selectively-method for evaluate the influence of surface loss on micro cantilever,” International Workshop on Micro/Nano-Engineering (Dec 17-18, 2011, Kyoto, Japan)
  243. S.Ueki, Y.Nishimori, H.Imamoto, M.Sugiyama, S.Samukawa, G.Hashiguchi: “Analysis of VB-FET using RC Ladder Circuit,” International Workshop on Micro/Nano-Engineering (Dec 17-18, 2011, Kyoto, Japan)
  244. T. Momose, Aiko Kondo, Y. Shimogaki, H. Uchida, and M. Sugiyama, “Novel organic crystal thin film growth technique using supercritical fluid capable of filling high-aspect-ratio features,” 13th European Meeting on Supercritical Fluids (Oct. 9-12, 2011, Hague, Netherland).
  245. T. Iwasaki, K. Ono, H. Yamada, T. Momose, H. Uchida, Y. Shimogaki, and M. Sugiyama, “Convective flow simulation of supercritical carbon dioxide fluid in cold wall type reactor,” 13th European Meeting on Supercritical Fluids (Oct. 9-12, Hague, Netherland).
  246. T. Aihara, Y. Nakano, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano, and T. Ikari : “Non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum wells for solar cell application”, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2011), L-1-2, Nagoya, Japan, September 28 (2011)
  247. T. Momose, M. Sugiyama, and Y. Shimogaki, “Mass Production Reactor design for Cu interconnects on 12-inch wafers using supercritical fluid deposition,” ADMETA Plus 2011 (Sept. 12-15, Shibaura Institute of Technology, Tokyo, Japan)
  248. T. Momose, M. Sugiyama, and Y. Shimogaki, “Feasibility study of wafer-scale reactor system for supercritical fluid deposition of Cu”, 6th Asia Pacific Chemical Reaction Engineering Symposium (APCRE) (Sept. 18-21, 2011, Beijin, China).
  249. M. Sugiyama, Y. Wang, H. Sodabanlu, S. Ma, H. Fujii, K. Watanabe, Y. Nakano: “Optical in situ monitoring of strain evolution and relaxation in lattice-mismatched InGaAs/GaAsP multiple quantum wells by MOVPE”, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy (July 31-Aug. 5, Monterey, CA, USA, 2011).
  250. ShaoJun Ma, Y. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano: “Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs,” 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy (July 31-Aug. 5, Monterey, CA, USA, 2011).
  251. Y. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama and Y. Nakano: “Management of highly-strained hetero interfaces in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application,” 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy (July 31-Aug. 5, Monterey, CA, USA, 2011).
  252. Yu Wen, Y. Wang, K. Watanabe, M. Sugiyama, Y. Nakano: “Enhanced Carrier Escape in MSQW Solar Cell and its Impact on Photovoltaic Performance,“ Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 928, (2011).
  253. K. Watanabe, Yasushi Hamamoto, A. Higo, M. Sugiyama, Y. Nakano: “Fabrication of Graded Refractive Index 3-Dimensional Anti-Reflection Structure Using Self-Assembled SiO2 Nano Particles,“ Conference Record of the 37th IEEE Photovoltaic Specialists Conference, G40, (2011).
  254. H. Sugiyama, Y. Wang, Y. Nakano, M. Sugiyama: “Effects of Quantum Wells Position and Background Doping on the Performance of Multiple Quantum Well Solar Cells,“ Conference Record of the 37th IEEE Photovoltaic Specialists Conference, A16, (2011).
  255. Y. Wang, Yu wen, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano: “A Superlattice Solar Cell With Enhanced Short Circuit Current And Minimized Drop In Open Circuit Voltage,“ Conference Record of the 37th IEEE Photovoltaic Specialists Conference, C9, (2011).
  256. M. Sugiyama, Y. Wang, K. Watanabe, Takayuki Morioka, Y. Okada, Y. Nakano: “Photocurrent Generation by Two-Step Photon Absorption with Quantum-Well Superlattice Cell,” Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 931, (2011).
  257. L. C Hirst, M. F Fuhrer, A. LeBris, J.-F. Guillemoles, M. J Y Tayebjee, R. G C R Clady, T. W Schmidt, Y. Wang, M. Sugiyama, N. J Ekins-Daukes: “Hot Carrier Dynamics in InGaAs/GaAsP Quantum Well Solar Cells,” Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 927, (2011).
  258. M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi: “Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction,” 2011 IEEE 8th International Conference on Group IV Photonics (GFP), p 36-8 (2011).
  259. Y. Shimada, M. Suzuki, M. Sugiyama, I. Kumagai, M. Umetsu: “Bioassisted selective-capture and release of nanoparticles toward application on microfluidic devices,” TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, p 1745-8 (2011).
  260. L. Linghan, A. Higo, R. Takigawa, E. Higurashi, M. Sugiyama, Y. Nakano: “Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding,” TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, p 2502-5 (2011)
  261. M. Yokoyama, M. S.H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding,” 2011 IEEE Symposium on VLSI Technology. Digest of Technical Papers, p 60-1 (2011).
  262. Shaojun Ma, H. Sodabanlu, K. Watanabe,　M. Sugiyama, and Y. Nakano: “In-situ measurement and simulation of wafer curvature of InGaAs/GaAsP strain-compensated multiple quantum wells”, Conference Proceedings, 38th International Symposium on Compound Semiconductors (ISCS 2011), P1.10, Berlin, Germany, May 23 (2011)
  263. Ling-Han LI, R. Takigawa, A. Higo, E. Higurashi, M. Sugiyama, and Y. Nakano: “Electrical pumping Febry-Perot lasing of III-V layers on highly doped silicon micro rib by plasma assisted direct bonding”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Mo-2.2.5, pp. 232-235, Berlin, Germany, May 23 (2011)
  264. Y. Ikku, M. Yokoyama, R. Iida, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: “ALD Al2O3 activated direct wafer bonding for III-V CMOS photonics platform,” 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM), p 4 (2011)
  265. Y. Wen, Y. Wang, M. Sugiyama, Y. Nakano, “Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance,” 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM), p 3 (2011)
  266. H. Sodabanlu, S. Ma, K. Watanabe, M. Sugiyama, Y. Nakano: “Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffraction,” 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM), p 4 (2011).
  267. Y. Wang, Y. Wen, M. Sugiyama, Y. Nakano: “Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: Towards a comprehensive understanding of strain accumulation influence on solar cell properties,” 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM) (2011).
  268. T. Kubota, S. Ueki, Y. Nishimori, G. Hashiguchi, M. Sugiyama and S. Samukawa: “Damage-free silicon etching using large diameter neutral beam source,” ICEP2011 (International Conference on Electronics Packaging) (Apr. 13-15, 2011, Nara, Japan)
  269. Y. Shimada, M. Suzuki, M. Sugiyama, I. Kumagaya and M. Umezu: “Site-selective binding of nanoparticles onto a silicon chip by peptides with an affinity for inorganic materials,” ICEP2011 (International Conference on Electronics Packaging) (Apr. 13-15, 2011, Nara, Japan)
  270. M. Abasaki, K. Yamada, S. Souma, N. Moronuki, M. Sugiyama, “Large-surface-area 3D self-assembled nano-porous structure for high-sensitivity gas-sensing,” TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, p 2598-601, 2011.
  271. H. Yamada, T. Momose, Y. Kitamura, Y. Hattori, Y. Shimogaki, M. Sugiyama: “Low temperature conformal silicon dioxide deposition using supercritical fluid for polymer-based MEMS,” Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), p 49-52, (2011)
  272. M. Abasaki, S. Souma, M. Takeda, N. Moronuki, M. Sugiyama: “Selective self-assembly of nanoparticles on trench sidewalls and its relationship with scallop nanostructure,” Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), p 41-44, (2011)
  273. Y.F. Li, Y. Tomizawa, A. Koga, G. Hashiguchi, M. Sugiyama, H. Fujita, “A trench-type anti-wear microprobe with nano-scale electric contacts for AFM LAO lithography,” Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), p 1337-1340, (2011)
  274. T. Momose, H. Yamada, Y. Kitamura, Y. Hattori, Y. Shimogaki, M. Sugiyama: “MEMS-compatible high-density trench capacitor with ultra-conformal Cu/SiO2 layers by supercritical fluid deposition,” Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), p 1309-1312, (2011)
  275. M. Yokoyama, R. Iida, S. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, “Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding,” Technical Digest - International Electron Devices Meeting, IEDM, p 3.1.1-3.1.4, (2010).
  276. M. Sugiyama K. Watanabe and Y. Nakano, (Invited talk) “Design and Growth Improvement in Quantum Wells for High-Efficiency Tandem Solar Cells,” Workshop on Information, Nano and Photonics Technology (WINPTech) 2010, Dec. 2-3, Kobe, Japan (2010).
  277. O. Nukaga, S. Yamamoto, K.V. Tabata, T. Kubota, S. Samukawa, M. Sugiyama, “Lateral nano-channel fabricated in fused silica by femtosecond laser irradiation and wet etching,” 14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010, v 2, p 1199-1201, 2010, 14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010.
  278. M. Sugiyama and Y. Nakano, (Invited talk) “MOVPE Technology of InGaAs/GaAsP Strain-balanced Quantum Wells for Improved Efficiency of Multijunction Solar Cells,” ENGE 2010, Nov. 21-24, Jeju, Korea (2010), GC01.
  279. T. Fujiwara, Y. Nakano, M. Sugiyama, “Continuous wavelength modulation from semi-polar InGaN/GaN MQWs with vapor-phase-diffusion-based selective-area pyramidal growth,” International Workshop on Nitride Semiconductors (IWN 2010), Sep 19-24. Tampa, Florida, U.S.A., 2010, AP1.22.
  280. H. Sodabanlu, Jung-Seung Yang, T. Tanemura, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Intersubband Absorption Saturation in GaN/AlNMultiple QuantumWells Grown by Metalorganic Vapor Phase Epitaxy,” International Workshop on Nitride Semiconductors (IWN 2010), Sep 19-24. Tampa, Florida, U.S.A., 2010.
  281. M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, S. Takagi, “Ultrasmall arrayed waveguide grating multiplexer using InP-based photonic wire waveguide on Si wafer for III-V CMOS photonics”, 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference (OFC/NFOEC 2010), p 3 (2010).
  282. M. Sugiyama, Kenichi Sugita, Y. Wang, and Y. Nakano: “Strain-balanced MOVPE of InGaAs/GaAsP multiple quantum wells using in situ surface reflectance anisotropy and curvature monitoring,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 13, Incline Village, Nevada, May 24 (2010)
  283. Y. Kondo, M. Deura, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama: “Highly lateral growth of InGaAs on Si (111) with reduced size of selective growth window,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 12, Incline Village, Nevada, May 24 (2010).
  284. R. Onitsuka, T. Tanemura, M. Sugiyama, and Y. Nakano: “High-material-efficiency MOVPE of GaAs without degradation of photovoltaic performances,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 18, Incline Village, Nevada, May 25 (2010).
  285. Jungseung Yang, S. Hassanet, M. Sugiyama, Y. Nakano, and Y. Shimogaki: ―Intersubband absorption of 1.55 μm in AlN/GaN multi quantum wells grown at 770?C by metal organic vapor phase epitaxy using pulse injection method,? the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 27, Incline Village, Nevada, May 26 (2010).
  286. Y. Terada, Y. Shimogaki, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama: “Improvement of GaAs MIS characteristics with the optimum thickness of AlP in situ passivation layer,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 33, Incline Village, Nevada, May 27 (2010).
  287. A. Higo, F. Pastorelli, K. Watanabe, M. Sugiyama, Y. Nakano, “Design and fabrication of broadband anti-reflection sub-wavelength periodic structure for solar cells,” Renewable Energy 2010, June 27-July 2 (2010), Yokohama, Japan.
  288. M. Sugiyama, Y. Wang, S. Choi, Y. Wen, Y. Nakano, “Do quantum wells really improve conversion efficiency of III-V photovoltaics? - Improvement thgouth device design and epitaxial growth ?“, Renewable Energy 2010, June 27-July 2 (2010), Yokohama, Japan.
  289. M. Sugiyama, Y. Wang, S. Choi, Y. Wen, Y. Nakano, “How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement?”, Conference Record of the 35th IEEE Photovoltaic Specialists Conference, p 676-679, (2010).
  290. Y. Wen, Y. Wang, M. Sugiyama, Y. Nakano, “Strain-compensated multiple stepped quantum wells (SC-MSQWs) cell for enhanced spectral response and carrier transport”, Conference Record of the 35th IEEE Photovoltaic Specialists Conference, p 385-388, (2010).
  291. Y. Wang, Y. Wen, M. Sugiyama, Y. Nakano, “InGaAs/GaAsP strain-compensated superlattice solar cell for enhanced spectral response”, Conference Record of the 35th IEEE Photovoltaic Specialists Conference, p 3383-3385, (2010).
  292. K. Watanabe, A. Higo, M. Sugiyama, Y. Nakano, “Self-assembled SiO2 particle coating on 2 layer anti-reflection films for efficiency enhancement of GaAs PV cells”, Conference Record of the 35th IEEE Photovoltaic Specialists Conference, p 205-208, (2010).
  293. M. Sugiyama, Soohyeck Choi, Wen Yu, Y. Wang, and Y. Nakano, “Design of Offset Quantum Well Solar Cell for Improved Efficiency,” International Symposium on Compound Semiconductor (ISCS 2010), May 31-June 4, Takamatsu, Japan, WeC3-5.
  294. M. Breedon, H. Sodabanlu, K. Kalantar-zadeh, Y. Nakano, M. Sugiyama, “Temperature dependant red shift of an intersubband transition in GaN/AlN multiple quantum wells,” International Symposium on Compound Semiconductor (ISCS 2010), May 31-June 4, Takamatsu, Japan, FrP79.
  295. M. Sugiyama, (Invited talk) “Selective area growth of III-V semiconductors: from fundamental aspects to device structures,” 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010), pp. 96-101, 2010.
  296. Ling-Han Li, R. Takigawa, A. Higo, E. Higurashi, M. Sugiyama, and Y. Nakano, “Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology”, Conference Proceedings, 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), ThA1-1, pp. 385-388, Takamatsu, Japan, May 31-June 4, 2010.
  297. M. Yokoyama, T. Yasuda, H. Takagi, Y. Urabe, H. Ishii, N. Miyata, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi,” III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding,” Conference Proceedings, 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), FrB2-3, pp. 500-503, Takamatsu, Japan, May 31-June 4, 2010.
  298. Lin-Hang Li, A. Higo, R. Takigawa, E. Higurashi, M. Sugiyama, and Y. Nakano, “Hetero-integration of high doped silicon micro wire to III-V active layer for electrical pumping light emission by plasma assisted bonding,“ International Conference on Electronics Packaging (ICEP 2010), FD4-1, Sapporo, Japan, May 12-14, (2010).
  299. M. Yokoyama, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, Y. Urabe, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, “High mobility III-V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers,” Digest of Technical Papers - Symposium on VLSI Technology, p 235-236, 2010
  300. T. Yasuda, N. Miyata, Y. Urabe, H. Ishii, T. Itatani, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, A. Ohtake, M. Yokoyama, T. Hoshii, T. Haimoto, M. Deura, M. Sugiyama, M. Takenaka, S. Takagi, “Relationships between interface structures and electrical properties in the high-κ/III-V system,” Materials Research Society Symposium Proceedings, v 1194, p 53-64, 2010, High-k Dielectrics on Semiconductors with High Carrier Mobility.
  301. Lin-Hang Li, A. Higo, R. Takigawa, E. Higurashi, M. Sugiyama, and Y. Nakano, “Hetero-integration of high doped silicon micro wire to III-V active layer for electrical pumping light emission by plasma assisted bonding,“ International Conference on Electronics Packaging (ICEP 2010), FD4-1, Sapporo, Japan, May 12-14, 2010.
  302. M. Yokoyama, T. Yasuda, H. Takagi, H. Ishii, H.; N. Miyata, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, “High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding,” ECS Transactions, v 33, n 4, p 391-401, (2010), Semiconductor Wafer Bonding 11: Science, Technology, and Applications.
  303. M. Sugiyama, (Invited talk) “Conformal metal deposition on deep-3D structures with supercritical fluid: current issues and their potential for 3D packaging,” MEMS changing the world ? Ubiquitous Sensors, Apr. 21, Nagoya, Japan (2010).
  304. H. Sodabanlu, Jeong Seung Yang, M. Sugiyama, Y. Shimogaki, T. Tanemura, and Y. Nakano, “Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells fabricated by metalorganic vapor phase epitaxy,” Proceedings of the 15th European Conference on Integrated Optics (ECIO 2010), WeP13, pp. 1-2, Cambridge, UK, April 6-9, (2010).
  305. M. Kubota, T. Okada, Y. Mita, M. Sugiyama, Y. Nakano: “A bulk micromachined vertical nano-gap Pirani wide-range pressure test structure for packaged MEMS performance monitoring”, IEEE International Conference on Microelectronic Test Structures (ICMTS 2010), p 14-17, (2010).
  306. M. Yokoyama, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi: “High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding”, 2009 Symposium on VLSI Technology (VLSIT), pp. 242-243 (2009).
  307. Y. Tomizawa, Yongfang Li, T. Akiba, G. Hashiguchi, K. Miyake, Y. Ando, M. Sugiyama, H. Fujita: “Tribological Investigation for a Probe Nano Lithography Using Conductive Atomic Force Microscopy,” World Tribology Congress 2009, P-183 (Sep. 2009, Kyoto, Japan).
  308. Yongfang Li, Y. Tomizawa, T. Akiba, G. Hashiguchi, K. Miyake, Y. Ando, M. Sugiyama, H. Fujita: “Wear and Friction Characteristics of a Pencil Type Microprobe for SPM Lithography,” World Tribology Congress 2009, P-184 (Sep. 2009, Kyoto, Japan).
  309. Y. Shimogaki, T. Momose, M. Sugiyama: Comparative study on the step coverage quality of Cu film by SCFD and CVD, ECS Transactions, v 25, n 8 PART 2, p 1199-1206, 2009, ECS Transactions - EuroCVD 17/CVD 17.
  310. H. Sodabanlu, Jung-Seung Yang, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Improvement of 1.5-μm-range intersubband transitions in MOVPE grown GaN/AlN MQWs by AlGaN interlayer,” Abstract Book, 8th International Conference on Nitride Semiconductors (ICNS-8), MP93, pp. 279-280, Jeju, Korea, October 19 (2009).
  311. Jung-Seung Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Blue-shift of intersubband absorption wavelength by low temperature metal organic vapor phase epitaxy of AlN/GaN multi quantum wells by pulse injection method,” Abstract Book, 8th International Conference on Nitride Semiconductors (ICNS-8), TP108, pp. 764-765, Jeju, Korea, October 20 (2009).
  312. M. Sugiyama, S. Yasukochi, T. Shioda, Y. Shimogaki, and Y. Nakano: “Examination of intermediate species in GaN MOVPE by selective-area growth, Abstract Book, 8th International Conference on Nitride Semiconductors (ICNS-8)”, TP41, pp. 630-631, Jeju, Korea, October 20 (2009).
  313. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Monolithically integrated muti-color light emitting diode fabrication by wide-stripe selective area metal-organic vapor phase epitaxy,” Abstract Book, 8th International Conference on Nitride Semiconductors (ICNS-8), ThP97, pp. 1273-1274, Jeju, Korea, October 22 (2009).
  314. M. Sugiyama, Y. Wen, Y. Wang, R. Onitsuka, M. Deura, and Y. Nakano: “III-V Coupled Quantum Well Solar Cells: Predicted Performances and Growth Challenges”, SSDM2009 (Sep 2009, Sendai, Japan) H-8-5.
  315. T. Momose, T. Uejima, H. Yamada, M. Sugiyama, Y. Shimogaki: “Ultra-Conformal Metal Coating on High-aspect-ratio 3D Structures using Supercritical Fluid: Controlled Selectivity/Non-Selectivity”, SSDM2009 (Sep 2009, Sendai, Japan) P-11-6.
  316. T. Momose, M. Sugiyama, and Y. Shimogaki, “The step coverage quality of Cu film by SCFD compared with CVD”, Advanced Metallization Conference 2009 (Oct. 19-21, 2009, Tokyo, Japan)
  317. Y. Shimogaki, T. Momose, and M. Sugiyama, “Selective Cu deposition using supercritical fluid”, Super Green 2009 (Oct. 15-17, 2009, Sendai, Japan)
  318. Y. Terada, M. Deura, Y. Shimogaki, Y. Nakano, and M. Sugiyama: Metalorganic vapor phase epitaxy of GaAs with AlP surface passivation layer for improved MOS characteristics, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2009), J-2-5, pp. 252-253, Sendai, Japan, October 7 (2009).
  319. M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama: "In Situ Monitoring of the Initial Nucleation for the Formation of Uniform InGaAs Micro-discs on Si," ECS Trans. 25 (8), 521 (2009).
  320. M. Sugiyama, S. Yasukochi, T. Shioda, Y. Shimogaki, and Y. Nakano: "Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate," ECS Trans. 25 (8), 507 (2009).
  321. M. Sugiyama, Y. Wang, M. Deura, R. Onitsuka and Y. Nakano: “In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy”, Proceedings of 34th IEEE PVSC (Philadelphia, June 2009) pp. 001879-001882.
  322. M. Takenaka, K. Takeda, T. Hoshii, T. Tanemura, M. Sugiyama, Y. Nakano, and S. Takagi, “Source/drain formation by using epitaxial regrowth of n+InP for III-V nMOSFETs”, 21th International Conference on Indium Phosphide and Related Materials (IPRM), Newport Beach, CA, USA, 10 - 14 May 2009, pp. 111-114
  323. M. Deura, T. Hoshii, M. Sugiyama, M. Takenaka, S. Takagi and Y. Nakano, “Uniform InGaAs Micro-Discs on Si by Micro-Channel Selective-Area MOVPE”, 21th International Conference on Indium Phosphide and Related Materials (IPRM), Newport Beach, CA, USA, 10 - 14 May 2009, pp. 48-51.
  324. Ling-Han Li, R. Takigawa, A. Higo, M. Kubota, E. Higurashi, M. Sugiyama, and Y. Nakano: “Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser,” 21st International Conference on Indium Phosphide and Related Materials (IPRM '09), WB1.6, pp. 230-233, Newport Beach, California, May 13 (2009).
  325. M. Yokoyama, M. Takenaka, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano and S. Takagi, “Demonstration of metal S/D III-V-OI MOSFETs on a Si substrate using direct wafer bonding”, VLSI symposium pp. 242-243, June 2009
  326. S. Takagi, M. Sugiyama, T. Yasuda and M. Takenaka, (Invited talk) “Ge/III-V Channel Engineering for future CMOS”, 1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215th Meeting of The Electrochemical Society, San Francisco, USA, May 24-29, 2009, ECS Trans. vol. 19, no. 5, pp. 9-20 (2009)
  327. S. Takagi, M. Sugiyama and M. Takenaka, (Invited talk) “Advanced Nano CMOS Platform using Ge/III-V Channels”, First International Symposium on Atomically Controlled Fabrication Technology - Surface and Thin Film Processing -, 17 February 2009, Osaka, Japan, pp. 28-29
  328. H. ?L. Lu, Y. Terada, M. Deura, Y. Shimogaki, Y. Nakano, and M. Sugiyama, "In situ passivation of InP surface using H2S by MOVPE", International Semiconductor Technology Conference, 20 March, 2009,Shanghai, China.
  329. T. Momose, T. Ohkubo, T. Umejima, T. Saito, M. Sugiyama, Y. Shimogaki, " Supercritical fluid deposition (SCFD) technique as a novel tool for MEMS fabrication," 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems. MEMS 2009, p 685-8, 2009.
  330. Norio Iizuka, Toshimasa Shimizu, Chaiyasit Kumtornkittikul, M. Sugiyama, and Y. Nakano: “Absorption saturation of AlN-based waveguide utilizing intersubband transition in GaN/AlN quantum wells”, Technical Digest CD, Optoelectronics and Communications Conference/Australian Conference on Optical Fiber Technology (OECC/ACOFT 2008), Sydney, Australia, TuH-6 (2008).
  331. N. Iizuka, H. Yoshida, N. Managaki, T. Shimizu, S. Hassanet, M. Sugiyama, Y. Nakano, " Saturation of intersubband absorption in GaN/AlN-based waveguide integrated with spot-size converter", 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), p 597-8, 2008.
  332. T. Momose, M. Sugiyama, Y. Shimogaki: “Feasibility study of a multi-wafer reactor system by supercritical fluid deposition of Cu for mass production,” Advanced Metallization Conference (AMC), p 289-293, 2009, Advanced Metallization Conference 2008, AMC 2008.
  333. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Kinetic analysis on InN and GaN selective area metal-organic vapor phase epitaxy”, Abstracts, the 14th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XIV), Metz, France, Tu-A2.2, pp. pp. 47-48 (2008).
  334. M. Deura, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Kinetic analysis of surface adsorption layer for InGaAsP-related binary and ternary systems using in situ RAS”, Abstracts, the 14th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XIV), Metz, France, We-B1.4, pp. 233-234, (2008).
  335. Y. Terada, M. Deura, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “In situ passivation of GaAs surface with aluminum oxide”, Abstracts, the 14th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XIV), Metz, France, We-B1.6, pp. 237-238 (2008).
  336. M. Deura, T. Hoshii, M. Sugiyama, Ryosho Nakane, M. Takenaka, Satoshi Sugahara, S. Takagi, and Y. Nakano: “Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si”, Abstracts, the 14th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XIV), Metz, France, We-B2.6, pp. 263-264 (2008).
  337. Haizheng Song, Y. Wang, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Non-linear surface reaction kinetics in GaAs selective area MOVPE”, Abstracts, the 14th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XIV), Metz, France, We-P61, pp. 385-386 (2008).
  338. Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Role of vapor-phase diffusion in selective-area MOVPE of InGaN MQWs”, Technical Digest, the Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Shizuoka, Mo-18, p. 58, (2008).
  339. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Selective area metal-organic vapor phase epitaxy of InN, GaN, and InGaN covering whole composition range”, Technical Digest, the Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Shizuoka, Mo-13, p. 53 (2008).
  340. Y. Yomita, T. Shioda, Y. Nakano, M. Sugiyama, "Role of vapor-phase diffusion in selective-area MOVPE of InGaN MQWs," 2008 International Nano-Optoelectronics Workshop, p 163-4, 2008.
  341. S. Ibrahim, K. Takeda, X. Song, M. Sugiyama, and Y. Nakano: “Cross-port cross gain modulation in active MMI”, Conference Proceedings CD, International Conference on Photonics in Switching (PS 2008), Sapporo, Japan, D-05-1 (2008).
  342. Ling-Han Li, A. Higo, M. Kubota, M. Sugiyama, and Y. Nakano : “A novel etching-oxidation fabrication method for 3D nano structures on silicon and its application to SOI symmetric waveguide and 3D taper spot size converter”, Technical Digest, Topical Meeting on Optical MEMS and Nanophotonics, Freibourg, Germany, M3.4, pp. 27-28 (2008).
  343. T. Uejima, T. Momose, M. Sugiyama, Y. Shimogaki: “One step fabrication method for Cu thin film on insulator by supercritical fluid deposition,” Advanced Metallization Conference 2007 (AMC 2007), p 253-7.
  344. Y. Wang, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Surface reaction kinetics of InP and InAs-MOVPE examined by selective area growth technique”, Proceedings of the 15th International Conference on Crystal Growth (ICCG15)/the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE13)/the 13th International Conference on Vapor Growth and Epitaxy (ICVGE13), 1106, Salt Lake City, Utah, August 12-17 (2007).
  345. R. Onitsuka, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Reactor-scale profile of As/P ratio studied by fluid dynamics simulation and in-situ analysis of surface kinetics”, Proceedings of the 15th International Conference on Crystal Growth (ICCG15)/the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE13)/the 13th International Conference on Vapor Growth and Epitaxy (ICVGE13), 1040, Salt Lake City, Utah, August 12-17 (2007).
  346. O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Characterization of indium segregation in MOVPE-grown InGaP by Schottky barrier height measurement”, Proceedings of the 15th International Conference on Crystal Growth (ICCG15)/the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE13)/the 13th International Conference on Vapor Growth and Epitaxy (ICVGE13), 203-s03, Salt Lake City, Utah, August 12-17 (2007).
  347. Haizheng Song, Y. Wang, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Surface reaction kinetics of GaAs and GaP MOVPE examined by selective area growth technique”, Proceedings of the 15th International Conference on Crystal Growth (ICCG15)/the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE13)/the 13th International Conference on Vapor Growth and Epitaxy (ICVGE13), 1100, Salt Lake City, Utah, August 12-17 (2007).
  348. T. Momose, M. Sugiyama, Y. Shimogaki, “Conformal deposition and gap-filling of copper into ultra narrow patterns by supercritical fluid deposition,” Advanced Metallization Conference (AMC), p 207-211, 2008, Advanced Metallization Conference 2007, AMC 2007
  349. M. Sugiyama, M. Deura, Haizheng Song, Y. Wang, Y. Shimogaki, and Y. Nakano: “Effect of atomistic surface structure on the macroscopic surface reaction rate constants for GaAs and InP”, Extended Abstracts, 12th European Workshop on Metalorganic Vapor Phase Epitaxy, D8, pp. 151-154, Bratislava, Slovakia, June 3-6 (2007).
  350. M. Deura, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Kinetics of surface adsorption layer on GaAs and InP studied with in-situ RAS”, Extended Abstracts, 12th European Workshop on Metalorganic Vapor Phase Epitaxy, G9, pp. 267-270, Bratislava, Slovakia, June 3-6 (2007).
  351. T. Hoshii, M. Deura, Masato Shichijo, M. Sugiyama, Satoshi Sugahara, M. Takenaka, Y. Nakano, and S. Takagi: “Formation of InGaAs-on-insulator structure by epitaxial lateral over growth from (111) Si”, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, F-1-5, pp. 132-133, Tsukuba, Ibaraki, September 19-21 (2007).
  352. N. Iizuka, K. Kaneko, N. Suzuki, C. Kumtornkittikul, T. Shimizu, M. Sugiyama, and Y. Nakano: (Invited Paper) “GaN-based high-speed intersubband optical switches”, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, E-7-1, pp. 980-981, Tsukuba, Ibaraki, September 19-21 (2007).
  353. T. Tanemura, M. Takenaka, A. Al Amin, K. Takeda, T. Shioda, M. Sugiyama, and Y. Nakano: “Design and fabrication of integrated 1x5 optical phased array switch on InP”, Conference Proceedings, IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS 2007), ThM2, pp. 780-781, Lake Buena Vista, Florida, October 21-25 (2007).
  354. T. Shimizu, C. Kumtornkittikul, N. Iizuka, M. Sugiyama, and Y. Nakano: “Intersubband transition of AlN/GaN quantum wells in optimized AlN-based waveguide structure”, Technical Digest, Conference on Lasers and Electro-Optics (CLEO 2007), JThD21, Baltimore, Maryland, May 6-11 (2007).
  355. T. Momose, M. Sugiyama, Y. Shimogaki, “Ultra thin Cu film fabrication by supercritical fluid deposition for ULSI metallization,” Materials Research Society Symposium Proceedings, v 992, p 13-18, 2007, Materials Research Society Symposium Proceedings - Deposition on Nonplanar Substrates
  356. H. Song, M. Sugiyama, Y. Nakano and Y. Shimogaki: "Non-linear surface reaction kinetics of GaAs MOVPE explored by selective area growth", ECS Transactions, v 2, n 7, Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Processing 3, 2007, p 145-156.
  357. T. Shioda, M. Sugiyama, Y. Nakano: Design of strain and bandgap profiles of InGaAsP fabricated by selective area metal-organic vapor phase epitaxy for polarization independent operation, International Conference on Indium Phosphide and Related Materials, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings, 2007, p 43-46.
  358. H. Song, Y. Wang, M. Sugiyama, Y. Nakano and Y. Shimogaki: Effects of Zn-and S-doping on kinetics of GaAs selective area MOVPE, International Conference on Indium Phosphide and Related Materials, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings, 2007, p 319-322.
  359. T. Momose, M. Sugiyama, and Y. Shimogaki, “Quantitative evaluation of gap-filing and conformal deposition in high aspect ratio features by supercritical fluid deposition of copper”, Material Research Society (MRS) Spring Meeting 2007, Apr. 9-13, 2007 San Francisco, CA.
  360. M. Sugiyama, I. Gunji, K. Ishikawa, M. Nakaishi, K. Yamashita, T. Ohba: "Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH", Advanced Metallization Conference 2006 (AMC 2006) pp. 111-116 (2007)
  361. T. Ohba, M. Sugiyama, K. Yamashita: "High resolution analysis of Cu thin oxide formed on Cu in 32-nm node Cu/low-k application", Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, pp. 310-313 (2007).
  362. H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Non-linear surface reaction kinetics of GaAs MOVPE explored by selective area growth", 209th Meeting of Electrochemical Society (May 7-11, 2006, Denver CO., USA), p. 798 (2006).
  363. M. Sugiyama, A. Nagato, A. Hirosawa and Y. Shimogaki, "Determination of surface reaction rate constant under mass-transport-limited kintetics: Si epitaxial growth from SiHCl3", 209th Meeting of Electrochemical Society (May 7-11, 2006, Denver CO., USA), p. 799 (2006).
  364. I.-T. Im, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Refinement of the Growth Kinetics of GaAs MOVPE Using Multi-Scale Analysis", 209th Meeting of Electrochemical Society (May 7-11, 2006, Denver CO., USA), p. 820 (2006).
  365. M. Sugiyama, K. Ishikawa, I. Gunji, K. Yamashita, T. Ohba: "Reduction of Copper Surface with Formic Acid for 32-nm-Node ULSI Metallization: Surface Kinetics Study" 209th Meeting of Electrochemical Society (May 7-11, 2006, Denver CO., USA), p. 828 (2006).
  366. J. Darja, M. J. Chan, M. Sugiyama and Y. Nakano: Monolithically integrated four-channel DFB laser array by MOVPE selective area growth for 1.5 ?m CWDM systems, 2006 IEEE LEOS Annual Meeting Conference (IEEE Cat. No. 06CH37736C), 2006, p 2.
  367. J. Darja, M. Sugiyama and Y. Nakano: DBR laser fabricated by wide-stripe selective area MOVPE and mass transport for monolithic integration, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings (IEEE Cat. No.06CH37737C), 2006, p 424-5.
  368. T. Nakano, E. Abe, M. Sugiyama, Y. Nakano, Y. Shimogaki: "Precise control of GaAs/InGaP interface structure and its abruptness analyzed by S-TEM )", Int. Conf. MOVPE 2006 (May 21-26, 2006, Miyazaki, Japan) We-B1.4. (2006).
  369. T. Momose, T. Ohkubo, M. Sugiyama and Y. Shimogaki: "Novel reducing chemistry for supercritical fluid deposition of copper", Materials, Technology and Reliability of Low-k Dielectrics and Cooper Interconnects (Materials Research Society Symposium Proceedings Volume 914), 2006, p 179-84 (2006).
  370. T. Momose, T. Ohkubo, M. Sugiyama and Y. Shimogaki: Evaluation of liquid additives as reducing agent and entrainer for supercritical fluid deposition of copper using in situ monitoring, Advanced Metallization Conference 2005 (AMC 2005), 2006, p 519-24.
  371. T. Momose, Tomohiro Ohkubo, M. Sugiyama, and Y. Shimogaki, “Novel reducing chemistry for supercritical fluid deposition of copper,” Material Research Society (MRS) Spring Meeting 2006, Apr. 17-21, 2006 San Francisco, CA.
  372. Y. Mita, M. Sugiyama, M. Kubota, F. Marty, T. Bourouina, and T. Shibata, “Aspect Ratio Dependent Scalloping Attenuation (ARDSA) in DRIE and an application to Low-Loss Fiber-Optical Switch, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), v 2006, 19th IEEE International Conference on Micro Electro Mechanical Systems, 2006, p 114-117.
  373. T. Orii, T. Momose, T. Ishii, T. Ohkubo, Y. Mukobata, Bin Zhao, M. Sugiyama, and Y. Shimogaki, “Fabrication of Nanostructure in Supercritical Fluid Carbon Dioxide,” 2005 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments, Yongpyong, Korea, Oct. 13-15, 2005.
  374. K. Hoshino, T. Nagai, Y. Mita, M. Sugiyama, K. Matsumoto and I. Shimoyama: Active ink-jet nozzles equipped with arrayed visual sensors for parallel alignment control, Proceedings of the 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Technical Digest, 2005, p 48-51.
  375. Xueliang Song, Foo Cheong Yit, Haizheng Song, M. Sugiyama, and Y. Nakano, "All-optical OTDM DEMUX with monolithic SOA-MZI switch by regrowth-free selective area MOVPE", Technical Digest, the Pacific Rim Conference on Lasers and Electro-Optics (IQEC/CLEO PR 2005), CTuJ4-4, pp. 424-425, Tokyo, Japan, July 11-15, 2005.
  376. T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, "Prediction method for the bandgap profiles of InGaAsP multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), WP-16, pp. 1-4, Glasgow, UK, May 8-12, 2005
  377. Haizheng Song, Xueliang Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki, "Effect of temperature and substrate misorientation on the surface reaction kinetics of selective area MOVPE", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), WP-17, pp. 1-4, Glasgow, UK, May 8-12, 2005.
  378. T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki, "Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), WP-20, pp. 1-4, Glasgow, UK, May 8-12, 2005.
  379. Foo Cheong Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, M. Sugiyama, and Y. Nakano, "Dynamic switching and wavelength conversion in a monolithically integrated michealson-interferometric SOA all-optical switch by selective area MOVPE", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), TuB1-2, pp. 1-4, Glasgow, UK, May 8-12, 2005.
  380. Haizheng Song, Xueliang Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki, "Selective area MOVPE for GaAs on (100) misoriented substrate", submitted to Meeting Abstracts, SOTAPOCS 42 Symposium at the 207th Meeting of the Electrochemical Society (ECS), #601, Quebec, Canada, May 15-20 2005.
  381. A. Al Amin, K. Sakurai, T. Shioda, M. Sugiyama, and Y. Nakano, "Selective area MOVPE based InP WDM channel selector", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), MoB1-3, pp. 1-4, Glasgow, UK, May 8-12, 2005.
  382. Foo Cheong Yit , Xueliang Song, Haizheng Song, Zhenrui Zhang, M. Sugiyama, and Y. Nakano, "Demultiplexing operation in a monolithically integrated Michelson interferometer SOA all-optical switch by single-step selective-area MOVPE", Book of Abstracts, the 12th European Conference on Integrated Optics (ECIO '05), WeA1-4, pp. 41-44, Grenoble, France, April 6-8, 2005.
  383. Foo Cheong Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, M. Sugiyama, and Y. Nakano, "Four-bandgap energy monolithic integration in an SOA-MZI all-optical switch with selective area MOVPE", Technical Digest, Eighth International Symposium on Contemporary Photonics Technology (CPT 2005), E-2, pp. 57-58, Tokyo, January 12-14, 2005.
  384. C. Kumtornkittikul, M. Sugiyama and Y. Nakano, “GaN waveguide structures with AlN cladding for novel optical devices,” proc. 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, MO-P-013 (2005).
  385. C. Kumtornkittikul, M. Sugiyama and Y. Nakano, “AiN high-mesa waveguides for ultrafast intersubband transition devices,” 10 th OptoElectronics and Communications Conference (OECC 2005), Seoul, 8E1-5, pp. 844-845 (2005)
  386. C. Kumtornkittikul, I. Waki, L. Ning, H. Otani, M. Sugiyama, Y. Nakano, “Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells,” IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581), pt. 1, pp. 140-1 Vol.1 (2004).
  387. H. Song, M. Sugiyama, X. Song, Y. Nakano, and Y. Shimogaki, “The effect of substrate misorientation on GaAs selective area MOVPE,” Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p.64 (2004).
  388. Y. Shimogaki, M. Sugiyama, Ik-Tae Im, Ho-Jin Oh, T. Tokimitsu, H. Watanabe, Y. Nakano, and H. Komiyama, “Multi-scale analysis for kinetic studies of chemical vapor deposition processes,” Abstract of The 10th Asian Pacific Confederation of Chemical Engineering (APCChE 2004), Kitakyushu, 3D-12 (2004).
  389. Y. Shimogaki, M. Sugiyama, S. Noda, H. Komiyama, “Initial nucleation and growth in fabrication of metal thin films by chemical vapor deposition,” Abstract of The 10th Asian Pacific Confederation of Chemical Engineering (APCChE 2004), Kitakyushu, 3P-08-051 (2004).
  390. T. Momose, M. Sugiyama, and Y. Shimogaki, “In situ observation of initial nucleation and growth processes in chemical vapor deposition and supercritical fluid deposition of copper,” Proc. Advanced Metallization Conference, Asia Session 2004 (ADMETA 2004), Tokyo, September 28-29, 2004, pp.106-107 (2005).
  391. M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka, Y. Egashira, K. Yamashita, H. Komiyama, and Y. Shimogaki, “Theoretical optimization of Al-CVD process based on elementary reaction simulation: from the growth rate to the surface morphology,” Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p.72 (2004).
  392. Y. Shimogaki, T. Iino, M. Sugiyama, T. Momose, Y.S. Kim, T. Tsumura, Y. Kajikawa, S. Noda, and H. Komiyama, “The initial nucleation behavior during Al, Cu, W-CVD on barrier metal layers,” Proceedings of Material Research Society 2004 Spring Meeting, F8.10, San Francisco, April 12-16, 2004 (2004).
  393. Foo Cheong Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, M. Sugiyama, and Y. Nakano, "Dynamic switching and wavelength conversion in a monolithically integrated michealson-interferometric SOA all-optical switch by selective area MOVPE", Conference Proceedings CD, 17th International Conference on Indium Phosphide and Related Materials (IPRM '05), TuB1-2, pp. 1-4, Glasgow, UK, May 8-12, 2005.
  394. C. Kumtornkittikul, I. Waki, Ning Li, M. Sugiyama, Y. Shimogaki, and Y. Nakano, "GaN/AlN multiple quantum wells and waveguide fabrication for ultrafast photonic devices utilizing intersubband transition", Conference Proceedings, IEEE Region 10 Conference (TENCON 2004), TD-10-2,0899, pp. 140-143, Chiang Mai, Thailand, November 21-24, 2004.
  395. Noriaki Waki, T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki, "Role of surface diffusion during selective area MOVPE growth of compound semiconductor", Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 51 (2004).
  396. T. Shioda, Takeshi Doi, Abdullah Al Amin, Xue-Liang Song, M. Sugiyama, Y. Shimogaki, and Y. Nakano, "Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy", Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 63 (2004).
  397. Noriaki Waki, T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki, "Role of surface diffusion during selective area MOVPE growth of compound semiconductor", Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 51 (2004).
  398. Y. Awa, T. Ide, T. Arakawa, N. Haneji, K. Tada, M. Sugiyama, H. Shimizu, Y. Shimogaki, and Y. Nakano, "Electron cyclotron resonance reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow for high etch rate and improvement of etched surface morphology", Digest of Papers, International Microprocesses and Nanotechnology Conference (MNC 2004), 28P-7-22, Osaka, Japan, October 26-29, 2004.
  399. Ning Li, Ichitaro Waki, M. Sugiyama, Y. Shimogaki, and Y. Nakano, "Fabrication of group III-nitride waveguides by inductively coupled plasma etching", Meeting Abstracts, 206th Meeting of the Electro-Chemical Society, M1, Paper 1237, Oahu, Hawaii, October 3-8, 2004.
  400. A. Al Amin, Xueliang Song, K. Sakurai, M. Sugiyama, and Y. Nakano, "Integration of semiconductor optical amplifiers with an arrayed waveguide grating demultiplexer by MOVPE selective area growth", Technical Digest, Topical Meeting on Integrated Photonics Research (IPR 2004), IFB4, San Francisco, California, June 30-July 2, 2004.
  401. A. Al Amin, T. Doi, K. Sakurai, Z. Zhang; X. Song; M. Sugiyama, Y. Nakano: Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits, Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices (IEEE Cat. No.04EX874), 2004, p 25-6
  402. M. Sugiyama, Y. H. J. Oh, I. T. Im, Nakano and Y. Shimogaki: Measurement of Surface Reaction Rate Constants and Reactor-Scale Simulation of Growth Rate and Composition in InGaAsP MOVPE, International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), Maui, USA. 2004, 17.
  403. A. Morita, M. Sugiyama, S. Koda, D. R. Hanson: Molecular dynamics and fluid dynamics analyses of mass accommodation kinetics, Abstracts of Papers, 228th ACS National Meeting, Philadelphia, PA, United States (2004)
  404. H. J. Oh, I. T. Im, M. Sugiyama, Y. Nakano and Y. Shimogaki: Study on the surface reaction kinetics of InGaAsP related materials MOCVD through analyses of growth rate distribution in the selective area growth Conference Proceedings - International Conference on Indium Phosphide and Related Materials , 2003, p 397-400
  405. A. Morita, M. Sugiyama, S. Koda: Numerical analysis on gas-phase diffusion resistance in the droplet train apparatus, Abstracts of Papers, 224th ACS National Meeting, Boston, MA, United States (2002)
  406. R. Shimizu, T. Januma, M. Ogino, M. Sugiyama, M. Koshi,Y. Shimogaki: Phenomenological and elementary reaction analysis of polycrystalline silicon CVD process, Materials Research Society Symposium Proceedings (2002), 716 (Silicon Materials--Processing, Characterization and Reliability), 501-506.
  407. T. Iino, M. Sugiyama, Y. Shimogaki: In-situ monitoring of nucleation stage during aluminum-CVD for nano-structure control, Materials Research Society Symposium Proceedings (2002), 697 (Surface Engineering 2001), 121-126.
  408. Y. Sato, M. Sugiyama and Y. Shimogaki: Gas phase intermediate and surface adsorbate structure speclation by frequency analysis with electronic structure method, Proceedings of AIChE Topical Conference (AIChE, New York, U.S.A.) p. 61 (2001).
  409. T. Iino, M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama and Y. Shimogaki: Surface morphology control of Al-CVD for dual-damascene application, Proceedings of Advanced Metallization Conference 2001 (Material Research Society, Pennsylvania, U.S.A.) pp. 527-532.
  410. M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka, H. Itoh, J. Aoyama, H. Komiyama and Y. Shimogaki: Theoretical optimization of Al-CVD using elementary reaction simulation, Proceedings - Electrochemical Society (2001), 2001-13 (Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II), pp. 284-291.
  411. I. Iino, M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama, Y. Shimogaki, “Surface morphology control of Al-CVD for dual-damascene application,” Advanced Metallization Conference 2001 (AMC 2001). Proceedings of the Conference, p 527-32, 2001
  412. M. Sugiyama, H. Ogawa, H. Itoh, J. Aoyama, Y. Horiike, H. Komiyama and Y. Shimogaki: Surface Analysis of Al Film Prepared from Dimethyl-aluminum-hydride: Chemical Vapor Deposition. Proceedings of the 15th International Conference on CVD, (PV2000-13, Electrochemical Society, Pennington, NJ, U.S.A.) pp. 489-496 (2000).
  413. O. Feron, M. Sugiyama, Y. Nakano, and Y. Shimogaki: Experimental and Numerical Study of InGaAsP Materials Growth Kinetics and Composition: Chemical Vapor Deposition. Proceedings of the 15thInternational Conference on CVD, (PV2000-13, Electrochemical Society, Pennington, NJ, U.S.A.) pp. 707-714 (2000).
  414. O. Feron, M. Sugiyama, Y. Nakano, and Y. Shimogaki: An experimental and numerical study of the composition distribution of InGaAs Pquaternary materials in a horizontal MOCVD reactor: Conference Proceedings.12th International Conference on Indium Phosphide and Related Materials (IPRM2000), IEEE, Williamsburg, USA, pp.368-371 (2000).
  415. M. Sugiyama, T. Nakajima, H. Itoh, J. Aoyama, Y. Egashira, K. Yamashita, H. Komiyama and Y. Shimogaki: Elementary Reaction Simulation of Al-CVD using Dimethylaluminumhydride, Interconnects and Contact Metallization for ULSI, Proceedings of 196th Meeting of the Electrochemical Society, (PV99-31, Electrochemical Society, Pennington, NJ, U.S.A.) pp. 56-67 (2000).
  416. T. Iino, M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama,, and Y. Shimogaki: Chemical passivation of TiN underlayer as anti-oxidation barrier for enhancing the nucleation of CVD-Al, Proceedings of Advanced Metallization Conference 2000 (Material Research Society, Pennsylvania, U.S.A.) pp. 679-683 (2001).
  417. M. Sugiyama, H. Ogawa, T. Nakajima, H. Itoh, J. Aoyama, Y. Egashira, K. Yamashita, Y. Horiike, H. Komiyama and Y. Shimogaki: Surface reaction model of Al growth using DMAH: elementary reaction simulationand surface analysis, Proceedings of Advanced Metallization Conference 1999 (Material Research Society, Pennsylvania, U.S.A.) p. 545.
  418. W. Asawamethapant, M. Sugiyama, Y. Shimogaki and Y, Nakano: Longitudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film quality, Conference Proceedings: 11th International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, (99CH36362, IEEE, NY,U.S.A.), pp. 55-58.
  419. M. Sugiyama, T. Yoshimi, H. Itoh and J. I. Aoyama, Y. Egashira, H. Komiyama and Y. Shimogaki: Reaction products of Al-CVD from Dimethylaluminumhydride Observed by Infrared Spectroscopy, Fundamental Gas-Phase and Surface Chemistry of Vapor ?Phase Materials Synthesis, Proceedings of the 194th Meeting of the Electrochemical Society (PV98-23, Electrochemical Society, Pennington, NJ, U.S.A.) pp. 252-257. (1997)
  420. Y. Mishima, N. Kaida, M. Sugiyama, Y. Shimogaki and Y. Nakano: Two-Dimensional Simulation of the Growth Enhancement in Selective Area Metal-Organic Vapor Phase Epitaxy, Fundamental Gas-Phase and Surface Cehmistry of Vapor -Phase Materials Synthesis, Proceedings of the194th Meeting of the Electrochemical Society (PV98-23,Electrochemical Society, Pennington, NJ, U.S.A.) pp. 364-369. (1997)
  421. M. Sugiyama, Y. Shimogaki, S. Sudo, Y. Nakano, K. Sugawara, K. Tada and H. Komiyama: Reaction chemistry of InGaAsP MOCVD studied with FT-IR gas monitoring and numerical analysis on growth kinetics, Chemical Vapor Deposition. Proceedings of the Fourteenth International Conference and EUROCVD-11, pp. 909-916 (1997).
  422. S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama and K. Tada: Improvement of heterointerface abruptness in MOVPE growth of InGaAs/InP quantum wells by in-situ kinetic ellipsometry, Proceeding of 10th International Conference on Indium Phosphide and Related Materials, Tokyo, Japan (IEEE, New York) pp. 485-488 (1998).
  423. S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama and K. Tada: In-situ monitoring of arsenic-phosphorus exchange in MOVPE growth of InGaAs/InP quantum wells by kinetic ellipsometry, Conference Proceedings: 1997 International Conference on Indium Phosphide and Related Materials (IPRM '97), Cape Cod, Mass., USA, TuB2, pp. 257-260, May (1997).
  424. S. Sudo, Y.Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama and K. Tada: Utilization of Spectroscopic and Kinetic Ellipsometry for In-situ As-P Exchange Monitoring in MOVPE of InGaAs/InP Heterostructure, Conference Proceeding of Second International Conference on Spectroscopic Ellipsometry (ICSE-2), Charlston, S.C., USA, pp. 7-8, May 1997.
  425. Y. Shimogaki, M. Sugiyama, K. Nishioka, M. Neduka, Y. Nakano, K. Tada and H. Komiyama: Simplified Modeling of ECR-RIBE reactor for the optimization of GaAs etching process with Cl2, Proceeding of the 190th Meeting of the Electrochemical Society (PV96-12,Electrochemical Society, Pennington, NJ, U.S.A.) pp. 83-88 (1996).
  426. M. Sugiyama, K. Nishioka, M. Neduka, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama: Modeling of ECR-RIBE process for GaAs with Cl2, Proceeding of the17th Symposium on Dry Process (DPS '95), Tokyo, Japan, Nov.1995, pp. 195-200.